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2SD669AB(TO-92NL)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size113KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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2SD669AB(TO-92NL) Overview

Transistor

2SD669AB(TO-92NL) Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompliant
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
surface mountNO
Base Number Matches1
UTC 2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with
UTC 2SB649/A
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
Collector-emitter voltage
2SD669
2SD669A
Emitter-base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
RATING
180
120
160
5
1.5
3
1
20
150
-55 ~ +150
UNIT
V
V
V
EBO
Ic
lc
(peak)
Pc
Pc
T
j
T
STG
V
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector to bse breakdown voltage
Collector to emitter breakdown
voltage
2SD669
2SD669A
Emitter to base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Current gain bandwidth product
Output capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
TEST CONDITIONS
I
C
=1mA, I
E
=0
I
C
=10mA, R
BE
=∞
MIN
180
120
160
5
60
30
TYP
MAX
UNIT
V
V
V
(BR)EBO
I
CBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
f
T
Cob
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
V
CE
=5V, Ic=150mA (note)
V
CE
=5V, Ic=500mA (note)
Ic=600mA, I
B
=50mA (note)
V
CE
=5V, Ic=150mA (note)
V
CE
=5V,Ic=150mA (note)
V
CB
=10V, I
E
=0, f=1MHz
10
320
1
1.5
140
14
V
µA
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R211-011,B

2SD669AB(TO-92NL) Related Products

2SD669AB(TO-92NL) 2SD669AC(TO-92NL) 2SD669AD(TO-92NL) 2SD669B(TO-92NL) 2SD669C(TO-92NL)
Description Transistor Transistor Transistor Transistor Transistor
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Code compliant compliant compliant compliant compliant
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 60 100 160 60 100
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W
surface mount NO NO NO NO NO
Base Number Matches 1 1 1 1 1
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