TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3.5A I(D),TO-39
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| Reach Compliance Code | not_compliant |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 3.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 25 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| 2N6802 | 2N6802TX | |
|---|---|---|
| Description | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3.5A I(D),TO-39 | 3.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| Reach Compliance Code | not_compliant | unknow |
| Configuration | Single | SINGLE WITH BUILT-IN DIODE |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| surface mount | NO | NO |
| Base Number Matches | 1 | 1 |
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