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2N6802TX

Description
3.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size158KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2N6802TX Overview

3.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

2N6802TX Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)60 pF
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power consumption environment25 W
Maximum pulsed drain current (IDM)11 A
Certification statusNot Qualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)85 ns
Maximum opening time (tons)60 ns
Base Number Matches1

2N6802TX Related Products

2N6802TX 2N6802
Description 3.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3.5A I(D),TO-39
Reach Compliance Code unknow not_compliant
Configuration SINGLE WITH BUILT-IN DIODE Single
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Base Number Matches 1 1
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