|
JANTX2N6802 |
2N6802TX |
| Description |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
| package instruction |
CYLINDRICAL, O-MBCY-W3 |
CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code |
unknown |
unknow |
| Other features |
RADIATION HARDENED |
RADIATION HARDENED |
| Shell connection |
DRAIN |
DRAIN |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage |
500 V |
500 V |
| Maximum drain current (ID) |
3.5 A |
3.5 A |
| Maximum drain-source on-resistance |
1.5 Ω |
1.5 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) |
60 pF |
60 pF |
| JEDEC-95 code |
TO-205AF |
TO-205AF |
| JESD-30 code |
O-MBCY-W3 |
O-MBCY-W3 |
| Number of components |
1 |
1 |
| Number of terminals |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
150 °C |
| Package body material |
METAL |
METAL |
| Package shape |
ROUND |
ROUND |
| Package form |
CYLINDRICAL |
CYLINDRICAL |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power consumption environment |
25 W |
25 W |
| Maximum pulsed drain current (IDM) |
11 A |
11 A |
| Certification status |
Not Qualified |
Not Qualified |
| Guideline |
MILITARY STANDARD (USA) |
MILITARY STANDARD (USA) |
| surface mount |
NO |
NO |
| Terminal form |
WIRE |
WIRE |
| Terminal location |
BOTTOM |
BOTTOM |
| transistor applications |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
| Maximum off time (toff) |
85 ns |
85 ns |
| Maximum opening time (tons) |
60 ns |
60 ns |
| Base Number Matches |
1 |
1 |
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