2N6802TX datasheet, PDF - EEWORLD Datasheet

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2N6802TX: DescriptionPower Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size158KB，5 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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2N6802TX Overview

Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

2N6802TX Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	60 pF
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	25 W
Maximum pulsed drain current (IDM)	11 A
Certification status	Not Qualified
Guideline	MILITARY STANDARD (USA)
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	85 ns
Maximum opening time (tons)	60 ns
Base Number Matches	1

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2N6802TX Related Products

	2N6802TX	JANTX2N6802
Description	Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknown
Other features	RADIATION HARDENED	RADIATION HARDENED
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	3.5 A	3.5 A
Maximum drain-source on-resistance	1.5 Ω	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	60 pF	60 pF
JEDEC-95 code	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	25 W	25 W
Maximum pulsed drain current (IDM)	11 A	11 A
Certification status	Not Qualified	Not Qualified
Guideline	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	85 ns	85 ns
Maximum opening time (tons)	60 ns	60 ns
Base Number Matches	1	1

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