2SK3458-S datasheet, PDF - EEWORLD Datasheet

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2SK3458-S: DescriptionPower Field-Effect Transistor, 6A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size84KB，8 Pages; ManufacturerNEC Electronics

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2SK3458-S Overview

Power Field-Effect Transistor, 6A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN

2SK3458-S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	66.5 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	24 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3458

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3458 is N-channel DMOS FET device that features a

low gate charge and excellent switching characteristics,

designed for high voltage applications such as switching power

supply.

ORDERING INFORMATION

PART NUMBER

2SK3458

2SK3458-S

2SK3458-ZK

PACKAGE

TO-220AB

TO-262

TO-263

FEATURES

•

Low gate charge

= 25 nC TYP. (V

= 450 V, V

= 10 V, I

= 6.0 A)

•

Gate voltage rating

±30

•

Low on-state resistance

DS(on)

= 2.2

Ω

MAX. (V

= 10 V, I

= 3.0 A)

•

Avalanche capability ratings

•

Surface mount package available

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC) (T

= 25°C)

Drain Current (pulse)

Note1

DSS

GSS

D(DC)

D(pulse)

stg

800

±30

±6.0

±24

1.5

100

150

–55 to +150

6.0

66.5

°C

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Note2

Notes 1.

≤

s, Duty Cycle

≤

Starting T

= 25°C, V

= 150 V, R

= 25

Ω,

= 20

0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D14755EJ1V0DS00 (1st edition)

Date Published June 2002 NS CP(K)

Printed in Japan

2000

2SK3458-S Related Products

	2SK3458-S	2SK3458-ZK
Description	Power Field-Effect Transistor, 6A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN	Power Field-Effect Transistor, 6A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZK, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics
Parts packaging code	TO-262AA	D2PAK
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	compliant	compliant
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	66.5 mJ	66.5 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V
Maximum drain current (ID)	6 A	6 A
Maximum drain-source on-resistance	2.2 Ω	2.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-263AB
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	24 A	24 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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