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2SB806KR-AZ

Description
Power Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, MINIMOLD, SC-62, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size234KB,4 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SB806KR-AZ Overview

Power Bipolar Transistor, 0.7A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, MINIMOLD, SC-62, 3 PIN

2SB806KR-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PSSO-F3
JESD-609 codee6
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
Base Number Matches1
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