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2SD596

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size237KB,4 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

2SD596 Overview

Small Signal Bipolar Transistor,

2SD596 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
Base Number Matches1
BL
Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
Micro package.
Production specification
2SD596
Pb
Lead-free
Complementary to 2SB624 PNP Transistor.
High DC current gain h
FE
:200TYP.(V
CE
=1.0V,I
C
=100mA)
APPLICATIONS
Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No.
2SD596
Marking
DV1/DV2/DV3/DV4/DV5
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
30
25
5
700
200
-55~150
Units
V
V
V
mA
mW
Document number: BL/SSSTC024
Rev.A
www.galaxycn.com
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Index Files: 1546  2102  1984  1927  1527  32  43  40  39  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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