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2SA1611M4-A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size195KB,4 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SA1611M4-A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD PACKAGE-3

2SA1611M4-A Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
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