DATA SHEET
SILICON TRANSISTOR
2SC4226
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low
noise amplifier.
It is suitable for a high density surface mount assembly since the transistor
has been applied small mini mold package.
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
FEATURES
2.0 ± 0.2
+0.1
0.3
–0
0.65 0.65
• Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• High Gain
|S
21e
| = 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• Small Mini Mold Package
EIAJ: SC-70
2
2
3
+0.1
0.3
–0
1
0.9 ± 0.1
PART
NUMBER
2SC4226-T1
QUANTITY
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector)face to perforation side of the
tape.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
2SC4226-T2
3 Kpcs/Reel.
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4226)
The information in this document is subject to change without notice.
Document No. P10368EJ3V0DS00 (3rd edition)
(Previous No. TC-2402)
Date Published July 1995 P
Printed in Japan
0 to 0.1
©
0.15
+0.1
–0.05
ORDERING INFORMATION
0.3
Marking
1993
2SC4226
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3
100
150
150
–65 to +150
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
7
40
3.0
110
4.5
0.7
9
1.2
2.5
1.5
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
UNIT
TEST CONDITION
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA*
1
V
CE
= 3 V, I
C
= 7 mA
V
CE
= 3 V, I
E
= 0, f = 1 MHz*
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
µ
A
µ
A
*1
*2
Pulse Measurement ; PW
≤
350
µ
s, Duty Cycle
≤
2 % Pulsed.
Measured with 3 terminals bridge, Emitter and Case should be grounded.
h
FE
Classification
Rank
Marking
h
FE
R23
R23
40 to 80
R24
R24
70 to 140
R25
R25
125 to 250
2
2SC4226
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
20
P
T
– Total Power Dissipation – mW
Free Air
200
I
C
– Collector Current – mA
V
CE
= 3 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
100
0
50
100
150
0
0.5
V
BE
– Base to Emitter Voltage – V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
T
A
– Ambient Temperature – °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
I
C
– Collector Current – mA
I
B
=
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
10
5
60
µ
A
40
µ
A
20
µ
A
5
V
CE
– Collector to Emitter Voltage – V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
f
T
– Gain Bandwidth Product – GHz
|S
21e
|
2
– Insertion Power Gain – dB
V
CE
= 3 V
f = 1.0 GHz
10
15
10
10
0.5
h
FE
– DC Current Gain
20
100
200
V
CE
= 3 V
15
50
20
0
1
5
10
50
I
C
– Collector Current – mA
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 1.0 GHz
10
5
5
2
1
0.5
1
5
10
50
0
0.5
1
5
10
50
100
I
C
– Collector Current – mA
I
C
– Collector Current – mA
3
2SC4226
NOISE FIGURE vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs. FREQUENCY
6
|S
21e
|
2
– Insertion Power Gain – dB
V
CE
= 3 V
f = 1 GHz
24
20
16
12
8
4
0
0.1
V
CE
= 3 V
I
C
= 7 mA
NF – Noise Figure – dB
4
2
0
0.5
1
5
10
50
100
0.2
0.5
1.0
2.0
5.0
I
C
– Collector Current – mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f – Frequency – GHz
5.0
C
re
– Feed-back Capacitance – pF
f = 1 MHz
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
V
CB
– Collector to Base Voltage – V
4
2SC4226
S-PARAMETER
V
CE
= 3 V, I
C
= 7 mA, Z
O
= 50
Ω
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
MAG
.750
.618
.528
.483
.459
.447
.441
.439
.437
.437
.440
.443
.444
.449
.450
.455
.459
.462
.466
.470
S
11
ANG
–45.7
–84.9
–114.5
–134.3
–148.5
–158.8
–167.4
–174.4
179.2
173.7
168.6
163.9
159.6
155.5
151.6
147.9
144.3
140.9
137.5
134.4
MAG
11.858
10.093
8.219
6.684
5.565
4.737
4.134
3.653
3.283
2.978
2.732
2.533
2.357
2.216
2.077
1.972
1.868
1.789
1.702
1.635
S
21
ANG
144.0
122.3
107.7
97.9
90.5
84.6
79.7
75.2
71.1
67.2
63.7
60.0
56.6
53.4
50.3
47.4
44.3
41.3
38.4
36.1
MAG
.035
.053
.064
.073
.081
.089
.098
.107
.117
.126
.136
.147
.158
.169
.180
.192
.202
.214
.226
.238
S
12
ANG
63.3
53.2
50.6
50.6
50.7
52.3
53.5
54.2
54.9
55.6
55.8
55.3
55.4
55.3
54.7
54.5
53.9
53.0
52.3
51.5
MAG
.816
.609
.481
.411
.365
.337
.316
.300
.290
.281
.275
.270
.267
.264
.259
.258
.256
.255
.253
.253
S
22
ANG
–28.5
–41.8
–46.7
–49.1
–50.5
–51.5
–52.6
–54.2
–55.9
–57.9
–59.6
–62.3
–64.7
–67.5
–70.6
–73.3
–76.3
–79.6
–83.0
–86.4
V
CE
= 3 V, I
C
= 5 mA, Z
O
= 50
Ω
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
MAG
.819
.701
.608
.549
.511
.494
.481
.475
.472
.471
.473
.474
.474
.477
.481
.484
.489
.490
.495
.501
S
11
ANG
–38.9
–73.4
–102.3
–123.6
–139.6
–151.0
–160.8
–168.6
–175.7
178.2
172.8
167.6
162.9
158.4
154.4
150.3
146.5
142.9
139.3
136.0
MAG
8.934
8.007
6.898
5.819
4.970
4.255
3.750
3.328
3.004
2.734
2.522
2.355
2.176
2.038
1.921
1.818
1.726
1.647
1.578
1.505
S
21
ANG
148.0
127.6
112.6
101.8
93.5
86.9
81.4
76.3
72.0
67.7
64.0
60.2
56.7
53.2
49.8
46.7
43.9
40.6
37.6
35.0
MAG
.038
.060
.072
.079
.086
.093
.099
.107
.113
.122
.130
.139
.148
.158
.168
.177
.190
.200
.212
.223
S
12
ANG
65.8
53.1
47.6
45.2
45.7
46.5
47.2
48.9
49.7
50.9
51.6
52.3
53.1
53.3
53.7
53.3
53.3
53.0
52.7
52.0
MAG
.868
.687
.560
.483
.434
.402
.379
.361
.350
.340
.332
.328
.322
.319
.315
.313
.312
.312
.309
.309
S
22
ANG
–23.6
–36.7
–42.4
–45.4
–47.2
–48.6
–49.9
–51.5
–53.4
–55.4
–57.3
–59.7
–62.3
–65.2
–68.2
–70.9
–73.9
–77.2
–80.8
–84.0
5
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