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2SB1375,F(J

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size162KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SB1375,F(J Overview

Power Bipolar Transistor

2SB1375,F(J Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2SB1375
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
Unit: mm
Low saturation voltage: V
CE (sat)
=
−1.5
V (max)
(I
C
=
−2
A, I
B
=
−0.2
A)
High power dissipation: P
C
= 25 W (Tc = 25°C)
Collector metal (fin) is covered with mold resin
Complementary to 2SD2012
Absolute Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−60
−60
−7
−3
−0.5
2.0
25
150
−55
to 150
Unit
V
V
V
A
A
JEDEC
W
°C
°C
2-10R1A
JEITA
TOSHIBA
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21

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