DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ603
2SJ603-S
2SJ603-ZJ
2SJ603-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 48 mΩ MAX. (V
GS
=
−10
V, I
D
=
−13
A)
R
DS(on)2
= 75 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−13
A)
•
Low input capacitance:
C
iss
= 1900 pF TYP. (V
DS
=
−10
V, V
GS
= 0 V)
•
Built-in gate protection diode
Note
TO-220SMD package is produced only in
Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
−60
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
m
20
m
25
m
70
50
1.5
150
−55
to +150
−25
62.5
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
=
−30
V, R
G
= 25
Ω,
V
GS
=
−20 →
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14648EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2000, 2001
2SJ603
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−48
V
V
GS
=
−10
V
I
D
=
−25
A
I
F
= 25 A, V
GS
= 0 V
I
F
= 25 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
TEST CONDITIONS
V
DS
=
−60
V, V
GS
= 0 V
V
GS
=
MIN.
TYP.
MAX.
−10
UNIT
µ
A
µ
A
V
S
m
20 V, V
DS
= 0 V
−1.5
10
−2.0
21
38
53
1900
350
140
10
11
66
20
38
7
10
1.0
49
100
m
10
−2.5
V
DS
=
−10
V, I
D
=
−1
mA
V
DS
=
−10
V, I
D
=
−13
A
V
GS
=
−10
V, I
D
=
−13
A
V
GS
=
−4.0
V, I
D
=
−13
A
V
DS
=
−10
V
V
GS
= 0 V
f = 1 MHz
V
DD
=
−30
V, I
D
=
−13
A
V
GS
=
−10
V
R
G
= 0
Ω
48
75
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
−
I
D
V
DD
BV
DSS
V
DS
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
(−)
90%
90%
10% 10%
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14648EJ3V0DS
2SJ603
TYPICAL CHARACTERISTICS (T
A
= 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
60
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120 140
160
100
80
60
40
20
0
50
40
30
20
10
0
0
20
40
60
80
100
120 140
160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–100
I
D(pulse)
10
0
PW
=
10
I
D
- Drain Current - A
–10
R
D
)
on
S(
Lim
d
ite
I
D(DC)
1
P
Li owe
m r
DC
ite D
d iss
ip
at
µ
s
µ
s
10
io
n
m
s
m
s
–1
–0.1
–0.1
T
C
= 25˚C
Single Pulse
–1
–10
–100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(j-A)
= 83.3˚C/W
10
R
th(j-C)
= 2.5˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14648EJ3V0DS
3
2SJ603
FORWARD TRANSFER CHARACTERISTICS
–100
–80
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
I
D
- Drain Current - A
–10
–60
V
GS
= –10 V
–1
T
A
=
−55˚C
25˚C
75˚C
125˚C
–40
–4.5 V
–4.0 V
–0.1
V
DS
= –10 V
Pulsed
–2
–3
–4
–5
V
GS
- Gate to Source Voltage - V
–20
Pulsed
0
0
–1
–2
–3
–4
–5
–0.01
–1
V
DS
- Drain to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
| y
fs
| - Forward Transfer Admittance - S
100
80
I
D
= –25 A
–13 A
–5 A
10
T
A
= 125˚C
75˚C
25˚C
−55˚C
60
1
40
0.1
V
DS
= –10 V
Pulsed
–0.1
–10
–100
–1
I
D
- Drain Current - A
20
0.01
–0.01
0
0
–5
–10
–15
–20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
100
80
60
40
20
0
–0.1
V
GS
= –4.0 V
–4.5 V
–10 V
Pulsed
–4.0
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= –10 V
I
D
= –1 mA
V
GS(off)
- Gate Cut-off Voltage - V
–100
–3.0
–2.0
–1.0
–1
–10
0
–50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14648EJ3V0DS
2SJ603
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–100
Pulsed
V
GS
= –10 V
–10
–4.0 V
–1
0V
80
V
GS
= –4.0 V
60
–10 V
40
–4.5V
I
SD
- Diode Forward Current - A
20
I
D
= –13 A
−50
0
50
100
150
–0.1
0
–0.01
0
–0.5
–1.0
–1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
SWITCHING CHARACTERISTICS
1000
C
iss
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0 V
f = 1 MHz
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
DD
= –30 V
V
GS
= –10 V
R
G
= 0
Ω
t
d(off)
t
f
100
C
oss
100
C
rss
10
t
r
t
d(on)
10
–0.1
–1
–10
–100
1
–0.1
–1
–10
–100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
–12
I
D
= –25 A
–10
V
DD
= –48 V
–30 V
–12 V
V
GS
–8
–6
–4
–2
0
40
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
–50
–40
–30
–20
–10
0
0
100
10
V
DS
5
10
15
20
25
30
35
1
0.1
1
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
Data Sheet D14648EJ3V0DS
5
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