UTC 2SA733
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is an low frequency amplifier.
3
1
FEATURES
*Collector-Emitter voltage:
BV
CBO
=-50V
*Collector current up to –150mA
*High hFE linearity
*Complimentary to 2SC945
2
SOT-23
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C
)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
-60
-50
-5
250
-150
125
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE1
V
CE
(sat)
f
T
Cob
NF
TEST CONDITIONS
Ic=-100µA, I
E
=0
I
C
=-10mA,I
B
=0
V
CB
=-40V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-6V,Ic=-1mA
Ic=-100mA,I
B
=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=-10V,I
E
=0,f=1MHz
Ic=-0.1mA,V
CE
=-6V
R
G
=10kΩ,f=100Hz
MIN
-60
-50
TYP
MAX
UNIT
V
V
nA
nA
90
-0.1
190
2.0
4.0
-100
-100
600
-0.3
3.0
6.0
100
V
MHz
pF
dB
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-068 ,A
UTC 2SA733
RANK
RANGE
PNP EPITAXIAL SILICON TRANSISTOR
R
90-180
Q
135-270
P
200-400
K
300-600
CLASSIFICATION OF hFE
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-100
3
10
Fig.2 DC current Gain
2
10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
H
FE
, DC current Gain
-80
Ic,Collector current (mA)
V
CE
=-6V
I
B
= -300
µA
-60
2
10
1
10
V
CE
=-6V
I
B
= -250
µA
I
B
= -200
µA
I
B
= -150
µA
-40
1
10
0
10
-20
I
B
= -100
µA
I
B
= -50
µA
0
0
-4
-8
-12
-16
-20
0
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
-0.2
-0.4
-0.6
-0.8
-1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
10
3
10
Fig.5 Current gain-bandwidth
product
2
10
Fig.6 Collector output
Capacitance
Cob,Capacitance (pF)
Ic=10*I
B
Current Gain-bandwidth
product,f
T
(MHz)
Saturation voltage (MV)
V
CE
=-6V
2
10
3
10
V
BE
(sat)
1
10
f=1MHz
I
E
=0
2
10
V
CE
(sat)
1
10
0
10
1
10
-1
10
0
10
1
10
2
10
3
10
0
10
-1
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-068 ,A
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
