DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
PACKAGE DRAWINGS
(Unit: mm)
1.6±0.1
0.8±0.1
2
0.5 0.5
1.6±0.1
1.0
0.2
–0
+0.1
I
C
= 100 mA
• Supercompact Mini Mold Package
3
ORDERING INFORMATION
PART NUMBER
2SC5195
QUANTITY
In-bulk products
(50 pcs.)
Taped products
(3 Kpcs/Reel)
PACKING STYLE
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of
the tape.
1
0.75±0.05
0.6
2SC5195-T1
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
9
6
2
100
125
150
–65 to +150
UNIT
V
V
V
mA
mW
˚C
˚C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10398EJ2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in Japan
©
0 to 0.1
0.15
–0.05
+0.1
0.3
–0
+0.1
88
1994
2SC5195
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Insertion Power Gain
Insertion Power Gain (1)
Noise Figure (2)
Noise Figure (1)
Gain Bandwidth Product (2)
Gain Bandwidth Product (1)
Collector Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
|S
21e
|
2
|S
21e
|
2
NF
NF
f
T
f
T
C
re
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
4.5
80
3
4
8
1.7
1.5
5
9.5
0.7
0.8
2.5
MIN.
TYP.
MAX.
100
100
160
dB
dB
dB
dB
GHz
GHz
pF
UNIT
nA
nA
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty cycle
≤
2 %, Pulsed
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
Marking
h
FE
FB
88
80 to 160
2
2SC5195
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
100
Free Air
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Total Power Dissipation P
T
(mW)
Collector Current I
C
(mA)
50
100
Ambient Temperature T
A
(°C)
150
10
100
1
50
0.1
0
0.01
0
0.5
Base to Emitter Voltage V
BE
(V)
1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µ
A
25
20
15
10
5
180
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
2.5
5
Collector to Emitter Voltage V
CE
(V)
7
0
0.1 0.2
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
C
(mA)
DC Current Gain h
FE
160
µ
A
100
0.5 1 2
5 10 20
Collector Current I
C
(mA)
50 100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 1 V
f = 2 GHz
10
V
CE
= 1 V
f = 2 GHz
10
5
5
0
1
2
3
5
7
10
Collector Current I
C
(mA)
20
0
1
2
3
5
7
10
Collector Current I
C
(mA)
20
3
2SC5195
3
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
21e
|
2
(dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 1 V
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
30
Noise Figure NF (dB)
2
f = 2 GHz
20
|S
21e
|
2
MAG
10
1
f = 1 GHz
1
2
3
5
7 10
Collector Current I
C
(mA)
20
0
0.1
0.2
0.5
1
Frequency f (GHz)
5
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
Feed-back Capacitance C
re
(pF)
1.5
0.5
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
1.0
0.1
1
2
5
10
Collector to Base Voltage V
CB
(V)
20
0.5
0.1
0.2
0.5
1
Frequency f (GHz)
2
4
Analog electronics
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