Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband
high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.80 mm
2
die. It is well-suited for RF, LO, and IF driver
applications.
Gain & Return Loss vs. Frequency
(GSG Probe Data)
30
25
20
Gain (dB)
GAIN
15
\
10
ORL
5
0
0
3
6
9
12
15
Fre que ncy (Ghz)
-25
-30
-20
-15
IRL
0
-5
-10
Return Loss (dB)
0.15-10 GHz, Cascadable pHEMT
MMIC Amplifier
Product Features
•
•
•
•
•
•
•
•
Broadband Performance
High Gain = 17.0 dB @ 2 GHz
P1dB = 21 dBm @ 2 GHz
Low-noise, Efficient Gain Block
5V Operation, No Dropping Resistor
Low Gain Variation vs. Temperature
Patented Thermal Design
Patented Self-Bias Darlington Topology
Applications
•
•
•
•
•
Broadband Communications
Test Instrumentation
Military & Space
LO and IF Mixer Applications
High IP3 RF Driver Applications
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
G
p
P1dB
OIP3
NF
IRL
ORL
Isol
V
D
I
D
ΔG/ΔT
Rth, j-l
Small Signal Power Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Device Operating Voltage
Device Operating Current
Gain Variation vs. Temperature
Thermal Resistance (junction-to-backside)
dB
dBm
dBm
dB
dB
dB
dB
V
mA
dB/°C
°C/W
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
17.0
14.5
21.0
20.0
32.0
30.5
2.8
3.7
12.0
-11.5
-18.0
-20.0
-21.0
-20.0
5.0
73
0.01
164
Test Conditions:
V
S
= 5.0V, I
D
= 73mA,
= 5 V
Tone Spacing
=
=
80 mA Typ.
per tone
OIP
dBm
Spacing = 1 MHz, Pout per tone = 0 dBm
1MHz, Pout
= 0
Tone
V
S
OIP3
I
D
Test Conditions:
3
Z
S
= Z
L
= 50 Ohms,
L
25C, GSG Probe Data
Z
L
= 50 Ohms
T = 25ºC
Z
S
=
With Bias Tees
Measured with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105418 Rev A
Preliminary
SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
S21 vs. Frequency
20
18
16
14
12
10
8
6
4
2
0
0
3
6
9
12
15
-20C
25C
85C
23
22
21
20
19
P1dB vs. Frequency
dBm
dB
18
17
16
15
14
13
0
1
2
3
4
5
6
7
8
9
10
25C
-20C
85C
Frequency (GHz)
Frequency (GHz)
S11 vs. Frequency
0
-5
-10
S22 vs. Frequency
0
-5
-10
dB
dB
-20C
25C
85C
-15
-20
-25
-30
0
3
6
9
12
15
-15
-20
-25
-30
0
3
6
9
12
15
-20C
25C
85C
Frequency (GHz)
Frequency (GHz)
OIP
3
vs. Frequency
35
7
6
Noise Figure vs. Fre que ncy
33
5
31
dBm
4
dB
3
29
25C
-20C
2
1
0
25C
-20C
85C
27
85C
25
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105418 Rev A
Preliminary
SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
Freq
(GHz)
0.15
0.50
0.85
2.0
4.0
6.0
10.0
V
D
(V)
5
5
5
5
5
5
5
Current
(mA)
73
73
73
73
73
73
73
Gain
(dB)
17.0
17.0
17.0
17.0
16.0
14.5
11.0
P1dB
(dBm)
OIP3
(dBm)
S11
(dB)
-18.0
-19.5
-20.0
-18.5
-14.5
-11.5
-9.0
S22
(dB)
-18.0
-19.5
-19.0
-18.5
-18.5
-20.0
-16.5
NF
(dB)
21.0
21.0
20.5
20.0
32.5
32.0
31.0
30.5
2.8
2.8
3.3
3.7
4.7
Test Conditions:
GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C
Test Conditions:
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Absolute Limit
80mA
5.5V
10dBm
Max Dissipated Power
Max Junction Temperature (T
J
)
Operating Temperature Range (T
L
)
Max Storage Temp.
440mW
150C
-40 to +85C
-65 to 150C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
T
L
=Backside of die
Current Variation vs. Temperature
Current vs. Voltage
80
75
70
ELECTROSTATIC SENSITIVE DEVICE
Appropriate precautions in handling, packaging
and testing devices must be observed.
mA
65
60
55
50
4.75
-20C
25C
85C
4.80
4.85
4.90
4.95
5.00
5.05
5.10
5.15
5.20
5.25
V
D
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-105418 Rev A
Preliminary
SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier
Pad Description
1
2
Pad #
Function
Description
1
2
Die
Bottom
This pad is DC coupled and matched to 50 Ohms.
An external DC block is required.
This pad is DC coupled and matched to 50 Ohms.
RF
OUT
/ Bias
Bias is applied through this pad.
RF
IN
GND
Die bottom must be connected to RF/DC ground
using silver-filled conductive epoxy.
Notes:
1. All Dimensions in Inches [Millimeters].
2. No connection required for unlabeled bond pads.
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