EEWORLDEEWORLDEEWORLD

Part Number

Search

1N4448-A

Description
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size45KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

1N4448-A Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35

1N4448-A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, GLASS PACKAGE-2
EU RoHS regulationsYes
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin silver
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.5000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.1500 A
1N4148 / 1N4448
FAST SWITCHING DIODE
Please click here to visit our online spice models database.
Features
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
Case: DO-35
Case Material: Glass
Moisture Sensitivity: Level 1 per J-STD-020D
Leads: Solderable per MIL-STD-202, Method 208
Terminals: Finish
Sn96.5Ag3.5. Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 2
Weight: 0.13 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0s
@ t = 1.0μs
I
FSM
1N4148
100
75
53
300
150
1.0
2.0
500
1N4448
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
500
1.68
300
-65 to +175
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics
Characteristic
Maximum Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
1N4148
1N4448
1N4448
V
FM
Min
0.62
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
μA
μA
μA
nA
pF
ns
Test Condition
I
F
= 10mA
I
F
= 5.0mA
I
F
= 100mA
V
R
= 75V
V
R
= 70V, T
J
= 150°C
V
R
= 20V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= 10mA to I
R
=1.0mA
V
R
= 6.0V, R
L
= 100Ω
Maximum Peak Reverse Current
Total Capacitance
Reverse Recovery Time
Notes:
I
RM
C
T
t
rr
1. Valid provided that device terminals are kept at ambient temperature.
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and high temperature solder exemptions applied where applicable,
see
EU Directive Annex Notes 5 and 7.
1N4148 / 1N4448
Document number: DS12019 Rev. 7 - 2
1 of 2
www.diodes.com
March 2008
© Diodes Incorporated

1N4448-A Related Products

1N4448-A 1N4148-A 1N4148_ 1N4148-T 1N4148
Description 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, SILICON, SIGNAL DIODE, DO-35
Number of terminals 2 2 2 2 2
Number of components 1 1 1 1 1
Processing package description ROHS COMPLIANT, GLASS PACKAGE-2 ROHS COMPLIANT, GLASS PACKAGE-2 ROHS COMPLIANT, GLASS PACKAGE-2 HERMETIC SEALED, glass, MINIMELF-2 HERMETIC SEALED, glass PACKAGE-2
state DISCONTINUED DISCONTINUED DISCONTINUED ACTIVE TRANSFERRED
packaging shape round round round round round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM SMALL OUTLINE
Terminal form Wire Wire Wire Wire GULL WING
terminal coating tin silver tin silver tin silver MATTE Tin tin lead
Terminal location AXIAL AXIAL AXIAL AXIAL pair
Packaging Materials Glass Glass Glass Glass Glass
structure single single single single single
Shell connection isolation isolation isolation isolation isolation
Diode component materials silicon silicon silicon silicon silicon
Maximum power consumption limit 0.5000 W 0.5000 W 0.5000 W 0.5000 W 0.5000 W
Diode type Signal diode Signal diode Signal diode Signal diode Signal diode
Maximum reverse recovery time 0.0040 us 0.0040 us 0.0040 us 0.0040 us 0.0040 us
Maximum average forward current 0.1500 A 0.1500 A 0.1500 A 0.1500 A 0.2000 A
EU RoHS regulations Yes Yes Yes Yes -
Maximum repetitive peak reverse voltage 75 V 75 V 75 V 100 V -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2708  1941  1770  544  2046  55  40  36  11  42 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号