INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4106
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage
: V
(BR)CEO
= 400V(Min.)
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
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VALUE
UNIT
500
V
400
V
7
V
7
A
14
A
3
A
50
W
1.75
℃
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
P
C
Collector Power Dissipation@T
a
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Gurrent Gain
DC Gurrent Gain
CONDITIONS
I
C
= 5mA ; R
BE
=
∞
I
C
= 1mA ; I
E
= 0
I
E
= 1mA ; I
C
= 0
I
C
= 4A; I
B
= 0.8A
B
2SC4106
MIN
400
500
7
TYP.
MAX
UNIT
V
V
V
0.8
1.5
10
V
V
μA
μA
I
C
= 4A; I
B
= 0.8A
B
V
CB
= 400V; I
E
= 0
V
EB
= 5V; I
C
=0
Current-Gain—Bandwidth Product
Output Capacitance
Switching times
t
on
t
stg
t
f
w
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cs
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w
I
C
= 0.8A ; V
CE
= 5V
I
C
= 4A ; V
CE
= 5V
I
C
= 10mA ; V
CE
= 5V
I
C
= 0.8A ; V
CE
= 10V
I
C
= 5A ;I
B1
= 1A; I
B2
= -2A
R
L
= 40Ω; V
CC
= 200V
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i
15
10
10
20
80
10
50
MHz
pF
I
E
= 0;V
CB
= 10V; f
test
= 1.0MHz
Turn-on Time
Storage Time
Fall Time
0.5
2.5
0.3
μs
μs
μs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
isc Website:www.iscsemi.cn
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