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2SC4106M

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size246KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SC4106M Overview

Transistor

2SC4106M Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4106
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage
: V
(BR)CEO
= 400V(Min.)
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
500
V
400
V
7
V
7
A
14
A
3
A
50
W
1.75
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
P
C
Collector Power Dissipation@T
a
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

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2SC4106M 2SC4106L 2SC4106N 2SC4106
Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknown
Base Number Matches 1 1 1 1
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