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MA1.5KE250CATR

Description
1500W, BIDIRECTIONAL, SILICON, TVS DIODE, CASE 1, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size381KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MA1.5KE250CATR Overview

1500W, BIDIRECTIONAL, SILICON, TVS DIODE, CASE 1, 2 PIN

MA1.5KE250CATR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Maximum breakdown voltage263 V
Minimum breakdown voltage237 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.52 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage214 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Unidirectional and Bidirectional
Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 V to 324 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
M1.5KE6.8A thru M1.5KE400CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 1500 watts @ 10/1000 µs
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote
129
for more details on the screening options.
Surface mount equivalent packages are available as MSMC(G)(J)5.0A - SMC(G)(J)170CA
(consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
CASE 1
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4 with fast response
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1: M1.5KE6.8A to M1.5KE200CA
o
Class 2: M1.5KE5.0A to M1.5KE180CA
o
Class 3: M1.5KE5.0A to M1.5KE91CA
o
Class 4: M1.5KE5.0A to M1.5KE43CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1 : M1.5KE5.0A to M1.5KE110CA
o
Class 2: M1.5KE5.0A to M1.5KE56CA
o
Class 3: M1.5KE5.0A to M1.5KE27ACA
o
Class 4: M1.5KE5.0A to M1.5KE13CA
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
o
Class 2: M1.5KE5.0A to M1.5KE24CA
o
Class 3: M1.5KE5.0A to M1.5KE12CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 1500 watts at 10/1000 μs (also see Figures 1, 2, and 3) with
impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
º
C to +150
º
C
Thermal Resistance: 22
º
C/W junction to lead at 3/8 inch (10 mm) from body, or 82
º
C/W junction to
ambient when mounted on FR4 PC board with 4 mm
2
copper pads (1oz) and track width 1 mm, length 25
mm
Steady-State Power dissipation: 5 watts at T
L
= 40
º
C, or 1.52 watts at T
A
= 25
º
C when mounted on FR4
PC board described for thermal resistance
Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25ºC (unidirectional only).
Solder temperatures: 260
º
C for 10 s (maximum)
RF01008 Rev C, September 2010
High Reliability Product Group
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