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2SJ462-T1

Description
Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size63KB,6 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

2SJ462-T1 Overview

Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT PACKAGE-3

2SJ462-T1 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance0.19 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)5 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
Package Drawings (unit : mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
3.65 ±0.1
FEATURES
1.0
1
0.5 ±0.1
2
3
• Can be driven by a 2.5 V power source.
• New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
• Low on-state resistance.
R
DS(ON)
: 0.29
MAX. @V
GS
= –2.5 V, I
D
= –0.5 A
R
DS(ON)
: 0.19
MAX. @V
GS
= –4.0 V, I
D
= –1.0 A
0.5 ±0.1
2.1
0.4 ±0.05
0.85 ±0.1
4.2
Equivalent Circuit
Electrode
Connection
1. Source
2. Drain
3. Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–12
±8.0
±2.5
±5.0*
2.0**
150
–55 to +150
V
V
A
A
W
˚
C
˚
C
Gate Protect
Diode
Gate
Drain
Internal Diode
Source
Marking : UA3
*
PW
10 ms, Duty Cycle
1 %
**
Mounted on ceramic board of 7.5 cm
2
×
0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
5.4 ±0.25
0.55
©
1996

2SJ462-T1 Related Products

2SJ462-T1 2SJ462-AZ
Description Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT PACKAGE-3 Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT PACKAGE-3
Maker NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (ID) 2.5 A 2.5 A
Maximum drain-source on-resistance 0.19 Ω 0.19 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 5 A 5 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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