DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
Package Drawings (unit : mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
3.65 ±0.1
FEATURES
1.0
1
0.5 ±0.1
2
3
• Can be driven by a 2.5 V power source.
• New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
• Low on-state resistance.
R
DS(ON)
: 0.29
Ω
MAX. @V
GS
= –2.5 V, I
D
= –0.5 A
R
DS(ON)
: 0.19
Ω
MAX. @V
GS
= –4.0 V, I
D
= –1.0 A
0.5 ±0.1
2.1
0.4 ±0.05
0.85 ±0.1
4.2
Equivalent Circuit
Electrode
Connection
1. Source
2. Drain
3. Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–12
±8.0
±2.5
±5.0*
2.0**
150
–55 to +150
V
V
A
A
W
˚
C
˚
C
Gate Protect
Diode
Gate
Drain
Internal Diode
Source
Marking : UA3
*
PW
≤
10 ms, Duty Cycle
≤
1 %
**
Mounted on ceramic board of 7.5 cm
2
×
0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
5.4 ±0.25
0.55
©
1996
2SJ462
ELECTRICAL SPECIFICATIONS (T
A
= +25 ˚C)
Parameter
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State
Resistance
Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)1
–0.7
1.5
195
290
–1.0
MIN.
TYP.
MAX.
–10
±10
–1.3
Unit
Conditions
V
DS
= –12 V, V
GS
= 0
V
GS
=
±8.0
V, V
DS
= 0
V
DS
= –3.0 V, I
D
= –1.0 mA
V
DS
= –3.0 V, I
D
= –1.0 A
V
GS
= –2.5 V, I
D
= –0.5 A
µ
A
µ
A
V
S
mΩ
R
DS(on)2
135
190
mΩ
V
GS
= –4.0, I
D
= –1.0 A
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S–D)
t
rr
Q
rr
940
835
495
45
225
140
195
12
2
7
–0.86
150
160
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
V
DS
= –3.0 V, V
GS
= 0
f = 1.0 MHz
V
DD
= –3.0 V, I
D
= –1.0 A
V
GS(on)
= –3.0 V, R
G
= 10
Ω
R
L
= 3.0
Ω
V
DS
= –8 V, I
D
= –2.5 A
V
GS
= –3.0 V, I
G
= –2 mA
I
F
= –2.5 A, V
GS
= 0
I
F
= –2.5 A, V
GS
= 0
di/dt = 50 A/
µ
s
2
2SJ462
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
–10
1
m
FORWARD BIAS SAFE OPERATING AREA
80
dT - Derating Factor - %
ID - Drain Current - A
10
s
m
s
60
PW
–1
DC
=1
00
m
s
40
20
Single Pulse
0
0
30
60
90
120
150
T
A
- Ambient Temperature - ˚C
–0.1
–1
–10
V
DS
- Drain to Source Voltage - V
–100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–5
–5 V
–10
–4 V
–3 V
I
D
- Drain Current - A
–1
TRANSFER CHARACTERISTICS
V
DS
= –3 V
–4
I
D
- Drain Current - A
–3
–0.1
T
A
= 125 ˚C
T
A
= 75 ˚C
T
A
= 25 ˚C
T
A
= –25 ˚C
–2
–2 V
–0.01
–1
V
GS
= –1 V
0
0
–2
–4
–6
–8
–10
V
DS
- Draint to Source Voltage - V
–0.001
–0.0001
0
–0.5
–1.0
–1.5
–2.0
V
GS
- Gate to Source Voltage - V
–2.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
IyfsI - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-State Resistance -
Ω
V
DS
= –3 V
0.6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
GS
= –2.5 V
0.5
0.4
0.3
T
A
= 125 ˚C
75 ˚C
0.2
0.1
0
–0.001
25 ˚C
–25 ˚C
1
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
0.1
0.01
–0.0001
–0.001
–0.01
–0.1
–1
–0.01
–0.1
–1
–10
I
D
- Drain Current - A
I
D
- Drain Current - A
3
2SJ462
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.3
I
D
= –2.5 A
R
DS(on)
- Drain to Source On-State Resistance -
Ω
0.6
V
GS
= –4 V
0.5
0.4
0.3
T
A
= 125 ˚C
0.2
0.1
0
–0.001
75 ˚C
25 ˚C
–25 ˚C
R
DS(on)
- Drain to Source On-State Resistance -
Ω
0.2 –1.0 A
–0.5 A
0.1
–0.01
–0.1
–1
–10
0
0
–2
–4
–6
–8
–10
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
V
GS
= 0
f = 1 MHz
1000
SWITCHING CHARACTERISTICS
V
DD
= –3 V
V
GS(on)
= –3 V
Rin = 10
Ω
Ciss,Coss,Crss - Capacitance - pF
t
d(on)
,t
r
,t
d(off)
,t
f
- Switching Time - ns
t
r
t
f
100
t
d(off)
t
d(on)
1
Ciss
Coss
Crss
0.1
–0.1
–1
V
DS
- Drain to Source Voltage - V
–10
10
–0.1
–1
I
D
- Draint Current - A
–10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10
12
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
8
V
DS
= –8 V
I
D
= –2.5 A
V
GS
–1
V
DS
- Drain to Source Voltage - V
8
V
DS
4
–0.1
4
2
–0.01
–0.001
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
0
0
0
8
16
24
32
40
Q
G
- Gate Charge - nC
V
SD
- Source to Drain Voltage - V
4
V
GS
- Gate to Source Voltage - V
I
D
- Reverse Drain Current - A
2SJ462
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
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