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BC807-16

Description
PNP SURFACE MOUNT TRANSISTOR
File Size270KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BC807-16 Overview

PNP SURFACE MOUNT TRANSISTOR

BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Features
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary NPN Types Available (BC817)
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
C
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
B
E
B
C
D
E
G
H
J
K
L
M
α
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
Pin Connections: See Diagram
Ordering Information: See Page 3
Marking Information: See Page 3
- BC807-16 5A, K5A
- BC807-25 5B, K5B
- BC807-40 5C, K5C
Weight: 0.008 grams (approximate)
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T
SB
= 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
θJSB
B
All Dimensions in mm
Maximum Ratings
Value
-45
-5.0
-500
-1000
-1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C/W
°C
R
θJA
T
j
, T
STG
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
Min
100
160
250
60
100
170
100
Typ
Max
250
400
600
-0.7
-1.2
-100
-5.0
-100
12
Unit
Test Condition
V
CE
= 1.0V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
Characteristic (Note 2)
DC Current Gain
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
1.
2.
3.
Device mounted on ceramic substrate 0.7mm; 2.5cm
2
area.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
h
FE
V
CE(SAT)
V
BE
I
CES
I
EBO
f
T
C
CBO
V
V
nA
µA
nA
MHz
pF
I
C
= 500mA, I
B
= 50mA
B
V
CE
= 1.0V, I
C
= 300mA
V
CE
= 45V
V
CE
= 25V, T
j
= 150°C
V
EB
= 4.0V
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
V
CB
= 10V, f = 1.0MHz
DS11208 Rev. 15 - 2
1 of 3
www.diodes.com
BC807-16/-25/-40
© Diodes Incorporated

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