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2SC1815

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size75KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
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2SC1815 Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC PACKAGE-3

2SC1815 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
MCC
Features
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SC1815
2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
Amplifier and General Purpose Applications.
Capable of 0.4Watts of Power Dissipation.
Collector-current 0.15A
Collector-base Voltage 60V
Marking Code: C1815
NPN Silicon
Epitaxial Transistor
TO-92
Pin Configuration
Bottom View
E
C
B
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=0.1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Voltage
(I
E
=310mAdc)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0Adc)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0Adc)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0Adc)
DC Current Gain*
(I
C
=2.0mAdc, V
CE
=6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
Base-Emitter Voltage
(I
E
=310mAdc)
Transistor Frequency
(I
C
=1.0mAdc, V
CE
=10Vdc, f=30MHz)
O
70-140
Y
120-240
Min
50
60
1.45
0.1
0.1
0.1
Max
Units
Vdc
Vdc
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
BEF
I
CBO
I
CEO
I
EBO
C
Vdc
uAdc
uAdc
uAdc
D
ON CHARACTERISTICS
h
FE(1)
V
CE(sat)
V
BE(sat)
V
BE
70
700
0.25
1.0
1.45
Vdc
Vdc
Vdc
INCHES
DIM
A
B
C
D
E
G
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
G
DIMENSIONS
MM
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
---
SMALL-SIGNAL CHARACTERISTICS
f
T
80
GR
200-400
MHz
BL
350-700
CLASSIFICATION OF H
FE (1)
Rank
Range
www.mccsemi.com
Revision: 2
2003/06/30

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