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2SA2154CTGR.L3AF(B

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size184KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA2154CTGR.L3AF(B Overview

Small Signal Bipolar Transistor

2SA2154CTGR.L3AF(B Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2SA2154CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA2154CT
General Purpose Amplifier Applications
High voltage and high current : V
CEO
=
−50V,
I
C
=
−100mA
(max)
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA) / h
FE
(I
C
=
−2
mA)= 0.95 (typ.)
High h
FE
:
h
FE
= 120 to 400
Unit: mm
Complementary to 2SC6026CT
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
−30
100*
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
CST3
1.BASE
2.EMITTER
3.COLLECTOR
* : Mounted on FR4 board (10 mm
×
10 mm
×
1 mmt)
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1J1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.75 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
120
80
Typ.
−0.18
1.6
Max
−0.1
−0.1
400
−0.3
Unit
μA
μA
V
MHz
pF
Note:
h
FE
classification Y (F): 120 to 240, GR (H): 200 to 400
( ) marking symbol
Marking
Type Name
h
FE
Rank
1
8F
2
3
Start of commercial production
2004-08
1
2014-03-01

2SA2154CTGR.L3AF(B Related Products

2SA2154CTGR.L3AF(B 2SA2154CT(TL3SONY) 2SA2154CT-GR,L3F(B 2SA2154CT-Y(TPL3) 2SA2154CT-GR,L3F
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor TRANS PNP 50V 0.1A TRANS PNP 50V 0.1A
Reach Compliance Code unknown unknow unknown unknown -
Base Number Matches 1 1 1 1 -

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