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2SA2154CT-GR,L3F

Description
TRANS PNP 50V 0.1A
Categorysemiconductor    Discrete semiconductor   
File Size184KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SA2154CT-GR,L3F Overview

TRANS PNP 50V 0.1A

2SA2154CT-GR,L3F Parametric

Parameter NameAttribute value
Transistor typePNP
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 10mA,100mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,6V
Power - Max100mW
Frequency - Transition80MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSC-101,SOT-883
Supplier device packagingCST3
2SA2154CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA2154CT
General Purpose Amplifier Applications
High voltage and high current : V
CEO
=
−50V,
I
C
=
−100mA
(max)
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA) / h
FE
(I
C
=
−2
mA)= 0.95 (typ.)
High h
FE
:
h
FE
= 120 to 400
Unit: mm
Complementary to 2SC6026CT
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
−30
100*
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
CST3
1.BASE
2.EMITTER
3.COLLECTOR
* : Mounted on FR4 board (10 mm
×
10 mm
×
1 mmt)
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1J1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.75 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
120
80
Typ.
−0.18
1.6
Max
−0.1
−0.1
400
−0.3
Unit
μA
μA
V
MHz
pF
Note:
h
FE
classification Y (F): 120 to 240, GR (H): 200 to 400
( ) marking symbol
Marking
Type Name
h
FE
Rank
1
8F
2
3
Start of commercial production
2004-08
1
2014-03-01

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Description TRANS PNP 50V 0.1A Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor TRANS PNP 50V 0.1A
Reach Compliance Code - unknow unknown unknown unknown
Base Number Matches - 1 1 1 1

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