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2021-25

Description
RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55AW, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size24KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2021-25 Overview

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, HERMETIC SEALED, 55AW, 2 PIN

2021-25 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2121115649
package instructionHERMETIC SEALED, 55AW, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)3 A
ConfigurationSINGLE
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
2021-25
25 Watts, 24 Volts, Class C
Microwave 2000 - 2130 MHz
GENERAL DESCRIPTION
The 2021-25 is a COMMON BASE transistor capable of providing 25 Watts,
Class C output power over the band 2000-2130 MHz. The transistor includes
input and output prematching for full Broadband capability. Gold
metalization and diffused ballasting are used to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
58 Watts
40 Volts
3.5 Volts
3.0 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST
CONDITIONS
F = 2000-2100 MHz
Vcc = 24 Volts
MIN
25
5.0
7.0
50
Pout = 25 Watts
3:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVces
BVebo
Hfe
Cob
θ
jc
Collector to Base Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance*
Thermal Resistance
Ic = 10 mA
Ie = 5 mA
Vce = 5V, Ic=1 A
Tc = 25 C
o
40
3.5
20
Volts
Volts
120
3.0
o
pF
C/W
* Not measureable due to internal prematch network
August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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