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BAS40W_1

Description
SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size334KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS40W_1 Overview

SILICON, SIGNAL DIODE

Lead-free Green
BAS40W/-04/-05/-06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
·
·
·
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
A
C
B C
SOT-323
Dim
A
B
C
D
B
G
H
K
M
E
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking: See Diagrams Below &Page 3
Weight: 0.006 grams (approximate)
0.65 Nominal
E
G
H
J
K
L
M
a
J
D
F
L
TOP VIEW
All Dimensions in mm
BAS40W Marking: K43
BAS40W-04 Marking: K44
BAS40W-05 Marking: K45
BAS40W-06 Marking: K46
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
@ t = 1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
qJA
T
j
T
STG
Value
40
28
200
600
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
5.
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
40
¾
¾
¾
¾
Max
¾
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I
R
= 10mA
I
F
= 1.0mA, t
p
< 300ms
I
F
= 40mA, t
p
< 300ms
V
R
= 30V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Device mounted on FR4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration test pulse used to minimize self-heating effect.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30114 Rev. 12 - 2
1 of 3
www.diodes.com
BAS40W/-04/-05/-06
ã
Diodes Incorporated

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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