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BAS70TW_1

Description
0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size64KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS70TW_1 Overview

0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE

Lead-free
BAS70TW /DW-04 /
DW-05 /DW-06 /BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3)
TOP VIEW
B C
SOT-363
A
Dim
A
B
C
D
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Orientation: See Diagrams Below
Marking: See Diagrams Below & Page 3
Weight: 0.006 grams (approximate)
A
1
0.65 Nominal
G
H
K
M
F
H
J
K
L
M
a
J
D
F
L
All Dimensions in mm
A
2
AC
1
C
2
C
2
C
1
A
2
C
2
A
2
AC
1
C
1
C
2
C
1
C
2
C
3
C
1
C
1
A
2
A
1
A
1
C
2
A
1
C
1
AC
2
A
1
A
2
AC
2
A
1
A
2
A
3
BAS70DW-06*
Marking: K76
BAS70DW-05*
Marking: K71
BAS70DW-04*
Marking: K74
BAS70BRW
Marking: K75
BAS70TW
Marking: K73
*Symmetrical configuration, no orientation indicator.
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
qJA
T
j
T
STG
Value
70
49
70
100
200
625
-55 to +125
-65 to +125
Unit
V
V
mA
mA
mW
°C/W
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
70
¾
¾
¾
¾
Max
¾
410
1000
100
2.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I
R
= 10mA
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
t
p
< 300µs, V
R
= 50V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
Irr = 0.1 x I
R
, R
L
= 100W
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30158 Rev. 10 - 2
1 of 3
www.diodes.com
BAS70TW /DW-04 /DW-05 /DW-06 /BRW
ã
Diodes Incorporated

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BAS70TW_1 BAS70DW-04 BAS70DW-06 BAS70DW-05 BAS70BRW
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