N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking (See Page 2): K38
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS138
50
50
±20
200
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Source
Gate
Drain
J
E
G
TOP VIEW
S
D
G
H
K
L
D
B
C
A
SOT-23
Dim
A
B
C
D
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
E
G
H
J
K
L
M
a
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Characteristic
Drain-Gate Voltage R
GS
£
20KW
Gate-Source Voltage
Drain Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
¾
¾
0.5
¾
100
¾
¾
¾
¾
¾
Typ
75
¾
¾
1.2
1.4
¾
¾
¾
¾
¾
¾
Max
¾
0.5
±100
1.5
3.5
¾
50
25
8.0
20
20
Unit
V
µA
nA
V
W
mS
pF
pF
pF
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50W
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250mA
V
GS
= 10V, I
D
= 0.22A
V
DS
= 25V, I
D
= 0.2A, f = 1.0KHz
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30144 Rev. 11 - 2
1 of 5
www.diodes.com
BSS138
ã
Diodes Incorporated
Ordering Information
Device
BSS138-7-F
Notes:
(Note 4)
Packaging
SOT-23
Shipping
3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
0.6
T
j
= 25°C
2000
L
March
3
2001
M
Apr
4
YM
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
V
GS
= 3.5V
I
D
, DRAIN-SOURCE CURRENT (A)
0.5
V
GS
= 3.25V
0.4
V
GS
= 3.0V
0.3
V
GS
= 2.75V
0.2
V
GS
= 2.5V
0.1
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0.8
I
D
, DRAIN-SOURCE CURRENT (A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
V
DS
= 1V
-55°C
25°C
150°C
DS30144 Rev. 11 - 2
2 of 5
www.diodes.com
BSS138
2.45
2.25
2.05
1.85
1.65
1.45
1.25
1.05
0.85
0.65
-55
-5
45
95
145
V
GS
= 4.5V
I
D
= 0.075A
V
GS
= 10V
I
D
= 0.5A
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125 140
I
D
= 1.0mA
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
R
DS(ON)
, DRAIN-SOURCE ON RESISTANCE (W)
8
7
6
5
4
3
-55°C
25°C
V
GS
= 2.5V
150°C
2
1
0
0
0.02
0.04
0.06
0.08 0.1
0.12
0.14
0.16
I
D
, DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
DS30144 Rev. 11 - 2
3 of 5
www.diodes.com
BSS138
9
8
7
6
5
4
3
2
1
0
0
0.05
0.1
0.15
0.2
0.25
I
D
, DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resistance vs. Drain Current
-55°C
25°C
V
GS
= 2.75V
150°C
6
V
GS
= 4.5V
5
150°C
4
3
2
25°C
1
-55°C
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
V
GS
= 10V
3
150°C
2.5
2
1.5
1
25°C
-55°C
0.5
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
I
D
, DRAIN CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain Current
DS30144 Rev. 11 - 2
4 of 5
www.diodes.com
BSS138
1
I
D
, DIODE CURRENT (A)
0.1
150°C
-55°C
0.01
25°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
V
GS
= 0V
f = 1MHz
C, CAPACITANCE (pF)
C
iSS
10
C
OSS
C
rSS
1
0
5
10
15
20
25
30
V
DS
, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at
www.diodes.com
are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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Microcontroller MCU
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