Lead-free Green
DCX100NS
100mA DUAL COMPLEMENTARY PRE-BIASED
TRANSISTORS
General Description
NEW PRODUCT
·
DCX100NS is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete PNP pass transistor which can
support continuous maximum current up to 100 mA. It also
contains an NPN transistor which can be used as a control
switch and also it can be biased using higher supply. The
component devices can be used as part of a circuit or
as stand alone discrete devices.
4
5
6
3
2
1
Fig. 1: SOT-563
Features
·
·
·
·
·
Built in Biasing Resistors
Epitaxial Planar Die Construction
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
Ideally Suited for Automated Assembly Processes
R4
10k
CQ1
6
BQ2
5
EQ2
4
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-563
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Fig. 2
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 5
Ordering Information: See Page 5 and 6
Weight: 0.005 grams (approximate)
SOT563
DDTA113ZE_DIE
R1
R3
Q2
10k
Q1
1k
R2
10k
DDTC114EE_DIE
1
EQ1
2
BQ1
3
CQ2
Fig. 2: Schematic and Pin Configuration
Sub-Component P/N
DDTA113ZE_DIE
DDTC114EE_DIE
Reference
Q1
Q2
Device Type
PNP
NPN
R1 (NOM)
1KW
¾
R2 (NOM)
10KW
¾
R3, R4 (NOM)
¾
10KW
Figure
2
2
Maximum Ratings: Total Device
Characteristic
Power Dissipation (Note 3)
@ T
A
= 25°C unless otherwise specified
Symbol
Pd
R
qJA
T
j
, T
stg
I
C(max)
Value
150
833
-55 to +150
100
@ T
A
= 25°C unless otherwise specified
Value
-50
+5 to -10
-100
Unit
V
V
mA
Unit
mW
°C/W
°C
mA
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Junction Temperature Range
Collector Current (using PNP as Pass Transistor)
Sub-Component Device - Pre-Biased PNP Transistor
Characteristic
Supply Voltage
Input Voltage
Output Current
Notes:
Symbol
V
cc
V
in
I
c
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30761 Rev. 4 - 2
1 of 7
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DCX100NS
ã
Diodes Incorporated
Sub-Component Device - Pre-Biased NPN Transistor
@ T
A
= 25°C unless otherwise specified
Value
50
-10 to +40
50
Unit
V
V
mA
NEW PRODUCT
Characteristic
Supply Voltage
Input Voltage
Output Current
Symbol
V
cc
V
in
I
c
Electrical Characteristics: Pre-Biased PNP Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistor Ratio Tolerance
Gain-Bandwidth Product
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
DR1
R2/R1
f
T
Min
-0.3
¾
¾
¾
¾
33
-30
0.8
¾
Typ
¾
¾
-0.1
¾
¾
¾
¾
1
250
Max
¾
-3.0
-0.3
-7.2
-0.5
¾
+30
1.2
¾
@ T
A
= 25°C unless otherwise specified
Unit
V
V
V
mA
uA
¾
%
%
MHz
Test Condition
V
CC
= -5V, I
O
= -100uA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
I
= -10mA / -0.5mA
V
I
= -5V
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
¾
¾
V
CE
= -10V, I
E
= -5mA, f = 100 MHz
Electrical Characteristics: Pre-Biased NPN Transistor
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistor Ratio Tolerance
Gain-Bandwidth Product
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
DR1
R2/R1
f
T
Min
0.5
¾
¾
¾
¾
30
-30
0.8
¾
Typ
1.18
1.85
0.1
¾
¾
¾
¾
1
250
¾
3
0.3
@ T
A
= 25°C unless otherwise specified
Unit
V
V
V
mA
uA
¾
%
¾
MHz
Test Condition
V
CC
= 5V, I
O
= 100uA
V
O
= 0.3V, I
O
= 10mA
I
O
/I
I
= 10mA / 0.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
¾
¾
V
CE
= 10V, I
E
= 5mA, f = 100 MHz
Max
0.88
0.5
¾
+30
1.2
¾
Typical Characteristics
@ T
amb
= 25°C unless otherwise specified
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 3 Power Derating Curve (Total Device)
DS30761 Rev. 4 - 2
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DCX100NS
Characteristics Curves of PNP Transistor (Q1)
@ T
amb
= 25°C unless otherwise specified
NEW PRODUCT
0.2
0.18
I
C
, COLLECTOR CURRENT (mA)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
0.2
0.4 0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 4 V
CE(SAT)
vs. I
C
I
b
= 2mA
I
b
= 4mA
I
b
= 6mA
I
b
= 14mA
I
b
= 18mA
I
b
= 16mA
I
b
= 20mA
300
V
CE
= 5V
T
A
= 150°C
250
h
FE
, DC CURRENT GAIN
I
b
= 12mA
I
b
= 10mA
T
A
= 125°C
200
T
A
= 85°C
I
b
= 8mA
150
T
A
= 25°C
100
T
A
= -55°C
50
0
0.1
100
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 DC Current Gain
1000
100
V
CE(SAT)
, COLLECTOR EMITTER
VOLTAGE (V)
Ic/Ib=10
V
CE(SAT)
, COLLECTOR EMITTER VOLTAGE (V)
100
Ic/Ib=20
10
10
1
T
A
= 150°C
1
T
A
=150°C
T
A
=125°C
T
A
= -55°C
0.1
T
A
= 125°C
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
0.1
T
A
= 85°C
T
A
= 25°C
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 V
CE(SAT)
vs I
C
1000
0.01
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 V
CE(SAT)
vs I
C
2
15
V
BE(0N)
, BASE EMITTER VOLTAGE (V)
V
CE
= 0.3V
1.8
1.6
1.4
1.2
1
0.8
0.6
V
CE
= 5V
12
INPUT VOLTAGE (V)
9
T
A
= -55°C
T
A
= 25°C
6
T
A
= 150°C
3
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
0.4
0.2
0
T
A
= 85°C
T
A
=125°C
T
A
= 125°C
0
0.1
1
T
A
=150°C
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Input Voltage vs. Output Current
100
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 V
BE(ON)
vs I
C
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DCX100NS
25
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
25
V
CE
= 0.3V
V
CE
= 5V
20
NEW PRODUCT
20
INPUT VOLTAGE (V)
15
15
T
A
= 150°C
T
A
= 125°C
10
10
T
A
= 85°C
5
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
T
A
= 150°C
5
T
A
= -55°C
T
A
= 25°C
0
0.1
1
10
0
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 17 V
BE(ON)
vs I
C
100
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 16 Input Voltage vs Output Current
V
BE(SAT)
, BASE EMITTER VOLTAGE (V)
V
BE(SAT)
, BASE EMITTER VOLTAGE (V)
30
Ic/Ib=10
24
30
Ic/Ib = 20
24
18
T
A
= -55°C
18
12
T
A
= 25°C
12
6
T
A
= 85°C
T
A
= 125°C
6
T
A
= -55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
0
0.1
T
A
= 150°C
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 18 V
BE(ON)
vs I
C
100
0
0.1
T
A
= 85°C
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 19 V
BE(SAT)
vs I
C
100
Ordering Information
Device
DCX100NS-7
(Note 4)
Marking Code
C01
Packaging
SOT-563
Shipping
3000/Tape & Reel
Notes:
4. For Packaging Details, please see page 6 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30761 Rev. 4 - 2
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DCX100NS
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