NOT RECOMMENDED FOR NEW DESIGNS
DLP3V3DTZ
DUAL UNIDIRECTIONAL AND SINGLE BIDIRECTIONAL TVS
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General Descriptions
•
This Transient Voltage Suppressor (TVS) diode is designed for
dual unidirectional or single bidirectional protection for data
lines, components or circuits from damage due to electrostatic
discharge (ESD), cable discharge events(CDE) and lightning
(see IPPM below). It offers high ESD capability, low reverse
leakage, low junction capacitance and low clamping voltage
over range of temperature. They are suitable for computers,
communication systems, hand held portables, high density PC
boards and peripherals.
Features
•
•
•
•
•
•
372 Watts Peak Pulse Power (tp=8/20
μS)
AEC-Q101 (Human Body Model- 8kV, Machine Model-400V)
and 25 kV(air)/ 8 kV(contact) as per IEC61000-4-2(ESD)
Dual Unidirectional and Single Bidirectional Configuration
Lead Free By Design/ROHS Compliant (Note 2)
"Green" Device (Note 3 & 4)
Surface Mount Package Suited for Automated Assembly
D1
GND
3
N/C
3
D2
D1
D2
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-23
Case Material: "Green” Molding Compound (Molded
Plastic). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Fig. 1
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 6
Ordering Information: See Page 6
Weight: 0.008 grams (approximate)
1
Line1_in
2
Line2_in
1
Line_in
2
GND
A. Unidirectional Protection
for two Lines
B. Bidirectional Protection
for a single Line
Fig. 1: Schematic and Pin Configuration
Absolute Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
Unidirectional
Bidirectional
P
pp
P
D
Unidirectional
Bidirectional
I
PP
I
FSM
V
pp
Value
372
145
300
40
15
10.5
±
25
±
8
Unit
W
mW
A
A
kV
Characteristic
Peak Pulse Power (tp=8/20μS)
Continuous Power Dissipation (Note1)
Maximum Peak Pulse Current (tp=8/20
μS)
Forward Surge Current (8.3 ms half sine-wave)
ESD per IEC 6100--4-2(air)
ESD per IEC 6100--4-2(contact)
Thermal Characteristics
Characteristic
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient Air (Note1)
Notes:
Symbol
T
j
, T
stg
R
θ
JA
Value
-55 to +150
420
Unit
°
C
°C/W
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30669 Rev. 3 - 3
1 of 8
www.diodes.com
DLP3V3DTZ
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGNS
Electrical Characteristics
Characteristic
Rated Reverse Standoff Voltage
Breakdown Voltage
Forward Voltage
Reverse Leakage Current @V
RWM
Unidirectional
Clamping Voltage (Note 5)
Bidirectional
Unidirectional
Bidirectional
Unidirectional
Junction Capacitance
Bidirectional
Unidirectional
Bidirectional
Dynamic Resistance @ I
pp
(large signal)
Dynamic Impedance
(small signal)
Temperature Coefficient
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
RWM
V
BR
V
F
I
R
Min
⎯
4.5
⎯
⎯
⎯
V
c
⎯
⎯
⎯
⎯
C
j
⎯
⎯
⎯
R
d
Z
Zt
θ
vz
⎯
⎯
⎯
⎯
Typ
⎯
⎯
0.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.115
380
47
-1.07
Max
3.3
⎯
⎯
0.095
6.0
7.0
9.3
9.666
420
210
230
115
⎯
⎯
⎯
⎯
Unit
V
V
V
mA
V
V
pF
Test Condition
Pin 1 to 3 or Pin 2 to 3
Pin 1 to 3 or Pin 2 to 3 @ I
T
= 1mA
Pin 3 to 1 or Pin 3 to 2, I
F
= 10mA
Pin 1 to 3 or Pin 2 to 3
I
pp
= 1A (Pin 1 to 3 or Pin 2 to 3
I
pp
=1A (Pin 1 to 2 or Pin 2 to 1,Pin 3 = nc)
I
pp
= 40A (Pin 1 to 3 or Pin 2 to 3)
I
pp
=15A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc)
V
R
= 0V, f = 1 MHz
V
R
= 3.3V, f = 1 MHz
I
pp
= 40A,Vc = 9.3V,V
BR
= 4.5V
(Pin 1 to 3 or 2 to 3)
I
R
= 1 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3)
I
R
= 5 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3)
pF
Ω
Ω
Ω
Unidirectional
Unidirectional
Unidirectional
mV/°C I
R
= 5 mA (Pin 1 to 3 or 2 to 3)
5. Clamping voltage value is based on a tp = 8/20
μS
peak pulse current (Ipp) waveform.
Typical Characteristics
@T
amb
= 25°C unless otherwise specified
372 W, 8/20
μ
S waveform
I
PP
, PEAK PULSE CURRENT (%I
pp
)
100
50
0
0
t
d
, PULSE DECAY TIME (
μ
S)
Fig. 2 Unidirectional Non-Repetitive Peak Pulse
Power vs. Pulse Duration or Pulse Width
40
t, TIME (
μ
s)
Fig. 3 Pulse Waveform
20
60
DS30669 Rev. 3 - 3
2 of 8
www.diodes.com
DLP3V3DTZ
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGNS
Unidirectional
Bidirectional
% OF RATED POWER OR I
pp
V
c
, CLAMPING VOLTAGE (V)
Peak Pulse Power
8/20
μ
s
0
5
10
15
20
25
30
35
40
45
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve
I
pp
, PEAK PULSE CURRENT (A)
Fig. 5 Clamping Voltage vs. Peak Pulse Current
Single TVS Diode Characteristics:
400
380
360
C
j
, CAPACITANCE (pF)
340
320
300
280
260
240
220
200
V
R
, REVERSE VOLTAGE (V)
Fig. 6 Junction Capacitance vs. Reverse Voltage
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Leakage Current vs. Reverse Voltage
f = 1MHz
I
R
, LEAKAGE CURRENT (
μ
A)
I
R
(uA) Ave @ -55°C
Ave V
F
(V) @ -55°C
I
F
, FORWARD CURRENT (mA)
0
0.2
0.4
0.6
0.8
1
1.2
V
R
, REVERSE VOLTAGE (V)
Fig. 9 Typical Reverse Characteristic
V
F
, FORWARD VOLTAGE (V)
Fig. 8 Typical Forward Characteristic
DS30669 Rev. 3 - 3
3 of 8
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I
R
, LEAKAGE CURRENT (mA)
DLP3V3DTZ
© Diodes Incorporated
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