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DMMT5551_1

Description
200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size90KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DMMT5551_1 Overview

200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

DMMT5551_1 Parametric

Parameter NameAttribute value
Number of terminals6
Transistor polarityNPN
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage160 V
Processing package descriptionGREEN, PLASTIC PACKAGE-6
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSEPARATE, 2 ELEMENTS
Number of components2
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor30
Rated crossover frequency100 MHz
Lead-free Green
DMMT5551/DMMT5551S
MATCHED NPN SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Low Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6
)
H
K
M
A
SOT-26
B C
Dim
A
B
C
D
F
H
J
K
L
M
Min
0.35
1.50
2.70
2.90
1.00
0.35
0.10
Max
0.50
1.70
3.00
3.10
1.30
0.55
0.20
Typ
0.38
1.60
2.80
0.95
0.55
3.00
0.05
1.10
0.40
0.15
Mechanical Data
J
Case: SOT-26
Case Material: Molded Plastic, "Green" Molding
Compound, Note 7. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
Marking (See Page 2): K4R & K4T
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
C
1
B
1
E
1
E
2
D
F
L
0.013 0.10
C
2
C
1
E
1
C
2
α
All Dimensions in mm
B
2
B
1
E
2
B
2
DMMT5551
(K4R Marking Code)
DMMT5551S
(K4T Marking Code)
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θJA
T
j
, T
STG
Value
180
160
6.0
200
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector Current - Continuous (Note 2)
Power Dissipation (Note 2, 3)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Notes:
1. Built with adjacent die from a single wafer.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Maximum combined dissipation.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php..
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30436 Rev. 7 - 2
1 of 4
www.diodes.com
DMMT5551/DMMT5551S
©
Diodes Incorporated

DMMT5551_1 Related Products

DMMT5551_1 DMMT5551S
Description 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 6 6
Transistor polarity NPN NPN
Maximum collector current 0.2000 A 0.2000 A
Maximum Collector-Emitter Voltage 160 V 160 V
Processing package description GREEN, PLASTIC PACKAGE-6 GREEN, PLASTIC PACKAGE-6
Lead-free Yes Yes
EU RoHS regulations Yes Yes
China RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Number of components 2 2
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 30 30
Rated crossover frequency 100 MHz 100 MHz
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