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RB400D

Description
0.5 A, 40 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size191KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB400D Overview

0.5 A, 40 V, SILICON, SIGNAL DIODE

RB400D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-59
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current3 A
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
RB400D
Diodes
Shottky barrier diode
RB400D
Application
Low current rectification
External dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
1.9
2.8±0.2
1.6
-0.1
Features
1) Small mold type. (SMD3)
2) Low I
R
3) High reliability.
 -0.05
(3)
1.0MIN.
0.15
-0.06
+0.1
0.95
+0.2
0.8MIN.
0½0.1
0.3½0.6
SMD3
(2)
(1)
0.95
1.9±0.2
0.8±0.1
1.1±0.2
0.01
Structure
Silicon epitaxial planar
0.95
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
8.0±0.2
3.2±0.1
3.2±0.1
4.0±0.1
φ1.05MIN
0½0.5
5.5±0.2
3.2±0.1
1.35±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward voltage(*1)
Forward current surge peak
(60Hz・1cyc)(*1)
Junction temperatuer
Storage temperature
(*1) Rating of per diode
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
40
500
3
125
-40 to +125
Unit
V
V
mA
A
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
1
I
R
2
Ct1
Ct2
Min.
-
-
-
-
-
Typ.
-
-
-
125
20
Max.
0.55
30
50
-
-
Unit
V
µA
µA
pF
pF
Conditions
I
F
=500mA
V
R
=10V
V
R
=30V
V
R
=0V , f=1MHz
V
R
=10V , f=1MHz
Rev.B
2.4
0.4
+0.1
2.9±0.2
各リードとも
Each lead has same dimension
同寸法
1/3

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RB400D RB400D_1
Description 0.5 A, 40 V, SILICON, SIGNAL DIODE 0.5 A, 40 V, SILICON, SIGNAL DIODE

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