EEWORLDEEWORLDEEWORLD

Part Number

Search

RB481Y-90

Description
0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size147KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RB481Y-90 Overview

0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE

RB481Y-90 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-75A
package instructionR-PDSO-F4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.61 V
JESD-30 codeR-PDSO-F4
JESD-609 codee2
Humidity sensitivity level1
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse current100 µA
Reverse test voltage90 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
RB481Y-90
Diodes
Schottky barrier diode
RB481Y-90
Applications
Low current rectification
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
0.5
1.6±0.1
1.6±0.05
1.2±0.1
Features
1) Ultra small mold type. (EMD4)
2) Low V
F
3) High reliability
0.22±0.05
0.13±0.05
(3)
0.45
1.6±0.05
1.6±0.1
(4)
0½0.1
1.0
EMD4
(1)
(2)
0.5
0.5±0.05
Construction
Silicon epitaxial planar
0.5
1.0±0.1
Structure
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
1.65±0.1
5.5±0.2
8.0±0.2
1.55
φ0.8±0.1
0½0.1
0.65±0.1
1.65±0.1
1.7±0.05
1PIN
4.0±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak
(60Hz・1cyc)(*1)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
90
90
100
1
125
-40 to +125
Unit
V
V
mA
A
(*1) Rating of per diode
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
0.55
20
Max.
0.61
100
Unit
V
µA
Conditions
I
F
=100mA
V
R
=90V
Rev.C
1.65±0.01
1/3

RB481Y-90 Related Products

RB481Y-90 RB481Y-90_1
Description 0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1716  2121  1787  86  1674  35  43  36  2  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号