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RB481Y-90_1

Description
0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size147KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RB481Y-90_1 Overview

0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE

RB481Y-90
Diodes
Schottky barrier diode
RB481Y-90
Applications
Low current rectification
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
0.5
1.6±0.1
1.6±0.05
1.2±0.1
Features
1) Ultra small mold type. (EMD4)
2) Low V
F
3) High reliability
0.22±0.05
0.13±0.05
(3)
0.45
1.6±0.05
1.6±0.1
(4)
0½0.1
1.0
EMD4
(1)
(2)
0.5
0.5±0.05
Construction
Silicon epitaxial planar
0.5
1.0±0.1
Structure
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
1.65±0.1
5.5±0.2
8.0±0.2
1.55
φ0.8±0.1
0½0.1
0.65±0.1
1.65±0.1
1.7±0.05
1PIN
4.0±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak
(60Hz・1cyc)(*1)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
90
90
100
1
125
-40 to +125
Unit
V
V
mA
A
(*1) Rating of per diode
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
0.55
20
Max.
0.61
100
Unit
V
µA
Conditions
I
F
=100mA
V
R
=90V
Rev.C
1.65±0.01
1/3

RB481Y-90_1 Related Products

RB481Y-90_1 RB481Y-90
Description 0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE

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