SBR0130S3
SBR0130S5
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Characteristics
Values
I
F(AV)
Rectangular Waveform
V
RRM
V
F
@0.1A, T
J
=75 C
T
J
(operating/storage)
o
Units
A
V
V, typ
o
C
0.10
30
0.37
-65 to 125
ELECTRICAL:
*
Low Forward Voltage Drop
*
Low Reverse Leakage
*
Reliable High Temperature Operation
*
Super Barrier Design
*
Softest, fast switching capability
o
* 125
C
Operating Junction Temperature
MECHANICAL:
*
Molded Plastic SOD-323, SOD-523 packages
SBR0130S3
Cathode Mark
A
SBR0130S5
A
B
B
SOD-523
SOD-323
Di
C
D
C
G
D
E
H
F
G
H
0.25
1.15
0.10
0.85
-
0.20
0.40
1.45
0.18
1.05
D
A
B
Min
2.30
1.60
Max
2.70
1.80
C
Di
A
B
C
D
E
F
0.10
0.40
F
E
Min
1.60
0.8
0.70
Max
1.80
1.0
0.85
0.35 (typ)
0.30 (typ)
0.70 (typ)
All Dimensions in mm
All Dimensions in mm
E
F
SOD-323
SOD-523
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SBR0130S3
SBR0130S5
Maximum Ratings and Electrical Characteristics
(at 25
o
C
unless otherwise specified)
SYMBOL
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated V
R
- 20Khz Square Wave) - 50% duty cycle
Peak Forward Surge Current - 1/2 60hz
Instantaneous Forward Voltage
o
I
F
= 100mA; T
J
= 25 C
I
F
= 100mA; T
J
= 75 C
Maximum Reverse Current at Rated V
RM
T
J
= 25 C
T
J
= 75 C
Operating and Storage Junction Temperature
NOTE: Dice are available for customer applications.
* Pulse width < 300 uS, Duty cycle < 2%
o
o
o
UNITS
30
Volts
V
RM
V
RWM
V
RRM
I
O
I
FSM
Typ
---
---
Typ
---
---
0.10
2
Max
0.42
0.40
Max
50
500
-65 to +125
Amps
Amps
V
F
Volts
I
R
*
uA
uA
O
T
J
C
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Version 2.0 - April 2006
2
SBR0130S3
SBR0130S5
1000
Tj=125C
100
Tj=75C
1
If, Instantaneous Forward Current (Amps)
Ir, Reverse Current (uA)
Tj=125C
10
Tj=25C
1
0.1
Tj=75C
Tj=25C
0.1
0
10
20
Vr, Reverse Voltage (Volts)
30
0.01
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
Vf, Instantaneous Forward Voltage (Volts)
Figure 1: Typical Reverse Current
Figure 2: Typical Forward Voltage
If, Average Forward Current (Amps)
0.1
0.05
0
0
25
50
75
100
125
Tc, Case Temp (C)
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of
others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent
regarding the design or manufacture of the part..
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Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
email: info@apdsemi.com
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Embedded System
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