FCAS50SN60 Smart Power Module for SRM
September 2006
FCAS50SN60
Smart Power Module for SRM
Features
• Very low thermal resistance due to using DBC
• 600V-50A single-phase asymmetric bridge IGBT converter
for SRM drive including control ICs for gate driving and pro-
tection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Switching frequency of 2.2~8kHz
• Isolation rating of 2500Vrms/min.
General Description
FCAS50SN60 is an advanced smart power module for SRM
drive that Fairchild has newly developed and designed to pro-
vide very compact and high performance SRM motor drives
mainly targeting low-power inverter-driven SRM application
especially for a vacuum air cleaner. It combines optimized cir-
cuit protection and drive matched to low-loss IGBTs. System
reliability is further enhanced by the integrated under-voltage
lock-out and short-circuit protection. The high speed built-in
HVIC provides opto-coupler-less IGBT gate driving capability
that further reduce the overall size of the inverter system
design. In addition the incorporated HVIC facilitates the use of
single-supply drive topology enabling the FCAS50SN60 to be
driven by only one drive supply voltage without negative bias.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.
Applications
• AC 200V ~ 242V single-phase SRM drives for home
application vacuum cleaner.
Top View
Bottom View
44 mm
26.8 mm
Figure 1.
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FCAS50SN60 Rev. A
FCAS50SN60 Smart Power Module for SRM
Integrated Power Functions
• 600V-50A IGBT asymmetric converter for single-phase SRM drives (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 10.
• For low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
(1) V
CC(L)
(2) COM
(3) NC
(4) NC
(5) IN
(L)
(6) V
FO
(7) C
FOD
(8) C
SC
(9) G
(L)
(10) E
(L)
(11) NC
(12) NC
(13) IN
(H)
(14) V
CC(H)
(15) V
B
(16) V
S
(17) G
(H)
(18) E
(H)
(19) R
(TH)
(20) V
(TH)
(21) N
B2
(22) NC
(23) N
B1
Case Temperature (T
C
)
Detecting Point
(24) N
A
(25) B
DBC
(26) A
(27) P
Figure 2.
2
FCAS50SN60 Rev. A
www.fairchildsemi.com
FCAS50SN60 Smart Power Module for SRM
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
V
CC(L)
COM
NC
NC
IN
(L)
V
FO
C
FOD
C
SC
G
(L)
E
(L)
NC
NC
IN
(H)
V
CC(H)
V
B
V
S
G
(H)
E
(H)
R
(TH)
V
(TH)
N
B2
NC
N
B1
N
A
B
A
P
Common Supply Ground
Dummy Pin
Dummy Pin
Signal Input for Low-side IGBT
Fault Output
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection
Gate terminal of low-side IGBT
Emitter terminal of low-side IGBT
Dummy Pin
Dummy Pin
Signal Input for High-side IGBT
High-side Bias Voltage
High-side Bias Voltage for Gate Driving
High-side Bias Voltage Ground for Gate Driving
Gate terminal of the High-side IGBT
Emitter terminal of the High-side IGBT
Thermistor Series Resistor
Thermistor Bias Voltage
Negative DC–Link Input for B Leg (Should be shorted with N
B1
externally)
Dummy Pin
Negative DC–Link Input for B Leg (Should be shorted with N
B2
externally)
Negative DC–Link Input for A Leg
Output for B Leg
Output for A Leg
Positive DC–Link Input
3
FCAS50SN60 Rev. A
www.fairchildsemi.com
FCAS50SN60 Smart Power Module for SRM
Internal Equivalent Circuit and Input/Output Pins
(20) V
(TH)
(19) R
(TH)
(15) V
B
(14) V
CC(H)
(13) IN
(H)
(16) V
S
(17) G
(H)
(18) E
(H)
P (27)
VB
VCC
COM
IN
OUT
VS
A (26)
(12) NC
(11) NC
(8) C
SC
(7) C
FOD
(6) V
FO
B (25)
C(SC)
C(FOD)
VFO
OUT(UL)
(5) IN
(L)
(4) NC
IN(WL) OUT(VL)
IN(VL)
N
A
(24)
(3) NC
IN(UL)
(2) COM
COM(L)
(1) V
CC(L)
OUT(WL)
N
B1
(23)
VCC
(9) G
(L)
(10) E
(L)
NC (22)
N
B2
(21)
Note:
1. The low-side is composed of one IGBT and freewheeling diode and one control IC which has gate driving and protection functions.
2. The power side is composed of four dc-link input terminals and two output terminals.
3. The high-side is composed of one IGBT and freewheeling diode and one drive IC for high-side IGBT.
Figure 3.
4
FCAS50SN60 Rev. A
www.fairchildsemi.com
FCAS50SN60 Smart Power Module for SRM
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C
Conditions
Applied between P- N
A
, N
B1
, N
B2
Rating
550
600
50
100
110
-20 ~ 125
Units
V
V
A
A
W
°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per One IGBT
(Note 1)
1. The maximum junction temperature rating of the power chips integrated within the module is 150
°C(@T
C
≤
100°C). However, to insure safe operation, the average junction
temperature should be limited to T
J(ave)
≤
125°C (@T
C
≤
100°C)
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Conditions
Applied between V
CC(H)
, V
CC(L)
- COM
Applied between V
B
- V
S
Applied between IN
(H)
, IN
(L)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Applied between C
SC
- COM
Rating
20
20
-0.3~5.5
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Units
V
V
V
V
mA
V
Total System
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 6µs
Rating
400
-20 ~ 95
-40 ~ 125
Units
V
°C
°C
V
rms
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
2500
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
2. For the measurement point of case temperature (T
C
), please refer to Figure 2.
Parameter
Junction to Case Thermal
Resistance
Conditions
Each IGBT under Operating Condition
Each FWDi under Operating Condition
Min.
-
-
Typ.
-
-
Max.
0.90
2.2
Units
°C/W
°C/W
5
FCAS50SN60 Rev. A
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