PD - 95378
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
UPS / Motor Control Inverters
l
Lead-Free
IRFB59N10DPbF
IRFS59N10DPbF
IRFSL59N10DPbF
HEXFET
®
Power MOSFET
V
DSS
100V
R
DS(on)
max
0.025Ω
I
D
59A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
TO-220AB
l
Fully Characterized Avalanche Voltage
IRFB59N10D
and Current
D
2
Pak
IRFS59N10D
TO-262
IRFSL59N10D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
59
42
236
3.8
200
1.3
± 30
3.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
l
Half-bridge and Full-bridge DC-DC Converters
Full-bridge Inverters
Notes
through
are on page 11
www.irf.com
1
06/07/04
IRFB/IRFS/IRFSL59N10DPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.025
Ω
V
GS
= 10V, I
D
= 35.4A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
76
24
36
16
90
20
12
2450
740
190
3370
390
690
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 35.4A
114
I
D
= 35.4A
36
nC
V
DS
= 80V
54
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 35.4A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
510
35.4
20
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
59
––– –––
showing the
A
G
integral reverse
––– ––– 236
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 35.4A, V
GS
= 0V
––– 130 200
ns
T
J
= 25°C, I
F
= 35.4A
––– 0.75 1.1
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFB/IRFS/IRFSL59N10DPbF
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
1
5.0V
1
0.1
5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
0.1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 59A
I
D
, Drain-to-Source Current (A)
2.0
100
T
J
= 175
°
C
1.5
10
1.0
1
T
J
= 25
°
C
V DS = 50V
20µs PULSE WIDTH
4
6
8
10
12
14
0.5
0.1
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFB/IRFS/IRFSL59N10DPbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
20
I
D
= 35.4A
V
GS
, Gate-to-Source Voltage (V)
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance(pF)
10000
12
Ciss
1000
8
Coss
4
Crss
100
1
10
100
0
0
20
40
60
FOR TEST CIRCUIT
SEE FIGURE 13
80
100
120
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
T
J
= 175
°
C
10us
100
100us
10
T
J
= 25
°
C
1
10
1ms
10ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFB/IRFS/IRFSL59N10DPbF
60
V
DS
V
GS
R
G
R
D
50
D.U.T.
+
I
D
, Drain Current (A)
40
-
V
DD
V
GS
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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