IRFSL59N10DPbF datasheet, PDF - EEWORLD Datasheet

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IRFSL59N10DPbF: Description59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size225KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFSL59N10DPbF Overview

59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFSL59N10DPbF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA
package instruction	LEAD FREE, PLASTIC, TO-262, 3 PIN
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	510 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	59 A
Maximum drain current (ID)	59 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Maximum pulsed drain current (IDM)	236 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 95378

SMPS MOSFET

Applications

High frequency DC-DC converters

UPS / Motor Control Inverters

Lead-Free

IRFB59N10DPbF

IRFS59N10DPbF

IRFSL59N10DPbF

HEXFET

Power MOSFET

DSS

100V

DS(on)

max

0.025Ω

59A

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

TO-220AB

Fully Characterized Avalanche Voltage

IRFB59N10D

and Current

Pak

IRFS59N10D

TO-262

IRFSL59N10D

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

Max.

236

3.8

200

1.3

± 30

3.3

-55 to + 175

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Units

W/°C

V/ns

°C

Typical SMPS Topologies

Half-bridge and Full-bridge DC-DC Converters

Full-bridge Inverters

Notes

through

are on page 11

www.irf.com

06/07/04

IRFSL59N10DPbF Related Products

	IRFSL59N10DPbF	IRFB59N10DPBF	IRFS59N10DPbF
Description	59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET	59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET	59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified?	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	LEAD FREE, PLASTIC, TO-262, 3 PIN	LEAD FREE PACKAGE-3	LEAD FREE, PLASTIC, D2PAK-3
Contacts	3	3	3
Reach Compliance Code	not_compliant	unknown	not_compliant
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	510 mJ	510 mJ	510 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	59 A	59 A	59 A
Maximum drain current (ID)	59 A	59 A	59 A
Maximum drain-source on-resistance	0.025 Ω	0.025 Ω	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	250	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	200 W	200 W	200 W
Maximum pulsed drain current (IDM)	236 A	236 A	236 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Parts packaging code	TO-262AA	TO-220AB	-
JEDEC-95 code	TO-262AA	TO-220AB	-
Humidity sensitivity level	1	-	1
Is it lead-free?	-	Lead free	Lead free

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