2N2432A datasheet, PDF - EEWORLD Datasheet

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2N2432A: DescriptionNPN SILICON LOW POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size53KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N2432A Overview

NPN SILICON LOW POWER TRANSISTOR

2N2432A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-206AA
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	CHOPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

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TECHNICAL DATA

NPN SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/313

Devices

2N2432

2N2432A

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Collector Voltage

Collector Current

Total Power Dissipation

Symbol

V

CEO

V

CBO

V

ECO

I

C

@ T

A

= +25 C

@ T

C

= +25

0

C

(2)

0

(1)

2N2432

30

15

2N2432A

45

18

Unit

Vdc

mAdc

mW

0

C

0

C

Unit

mW/

0

C

P

T

stg

T

J

Symbol

R

θ

JC

Operating & Storage Junction Temp. Range

100

300

600

-65 to +200

-65 to +175

Max.

0.25

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

1) Derate linearly 2.0 mW/

0

C above T

A

> +25

0

C

2) Derate linearly 4.0 mW/

0

C above T

C

> +25

0

C

TO- 18*

(TO-206AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Emitter-Collector Breakdown Voltage

I

E

= 100

µAdc,

I

B

= 0

I

E

= 10 mAdc, I

B

= 0

Collector-Emitter Breakdown Current

I

C

= 10 mAdc

Collector-Emitter Cutoff Current

V

CB

= 25 Vdc

V

CB

= 40 Vdc

2N2432

2N2432A

Both

2N2432

2N2432A

2N2432

2N2432A

V

(BR)

ECO

15

18

10

30

45

10

Vdc

V

(BR)

CEO

Vdc

I

CES

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N2432A Related Products

	2N2432A	2N2432	2N2432E3	JAN2N2432	JAN2N2432A	JANTXV2N2432A
Description	NPN SILICON LOW POWER TRANSISTOR	NPN SILICON LOW POWER TRANSISTOR	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA,	TRANS NPN 30V 0.1A	TRANS NPN 45V 0.1A	TRANS NPN 45V 0.1A TO-18
Reach Compliance Code	compli	compli	compliant	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	30 V	30 V	30 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50	80	80	80
JEDEC-95 code	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA	TO-206AA
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	CHOPPER	CHOPPER	CHOPPER	CHOPPER	CHOPPER	CHOPPER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz	20 MHz
Base Number Matches	1	1	1	1	1	1
Is it lead-free?	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	conform to	-	incompatible	incompatible	incompatible
Parts packaging code	BCY	BCY	-	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	-	SIMILAR TO TO-18, 3 PIN	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	-	3	3	3
JESD-609 code	e0	e0	-	e0	e0	e0
Maximum operating temperature	200 °C	175 °C	-	175 °C	175 °C	175 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	-	Qualified	Qualified	Qualified
Terminal surface	TIN LEAD	TIN LEAD	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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