FDS6679
March 2005
FDS6679
30 Volt P-Channel PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
–13 A, –30 V. R
DS(ON)
= 9 mΩ @ V
GS
= –10 V
R
DS(ON)
= 13 mΩ @ V
GS
= – 4.5 V
•
Extended V
GSS
range (±25V) for battery applications
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–30
±25
(Note 1a)
Units
V
V
A
W
–13
–50
2.5
1.2
1.0
–55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6679
Device
FDS6679
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2005
Fairchild Semiconductor Corporation
FDS6679 Rev C1 (W)
FDS6679
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –24 V,
V
GS
= ±25 V,
V
GS
= 0 V
V
DS
= 0 V
Min
–30
Typ
Max Units
V
Off Characteristics
–23
–1
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –13 A
I
D
= –11 A
V
GS
= –4.5 V,
V
GS
=–10 V, I
D
=–13 A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –13 A
–1
–1.6
5
7.3
10
9.5
–3
V
mV/°C
9
13
13
mΩ
I
D(on)
g
FS
–50
44
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
3939
972
498
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
19
10
110
65
34
20
176
104
100
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –13 A,
71
12
15
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.1 A
Voltage
–2.1
(Note 2)
A
V
–0.7
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
2
pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6679 Rev C1 (W)
FDS6679
Typical Characteristics
50
V
GS
= -10V
-6.0V
-I
D
, DRAIN CURRENT (A)
40
-4.5V
30
-3.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.0V
-3.5V
3
2.6
2.2
1.8
1.4
1
0.6
-3.5V
-4.0V
-4.5V
-5.0V
-6.0V
-10V
V
GS
= -3.0V
20
10
-2.5V
0
0
0.5
1
1.5
2
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
10
20
30
40
50
-I
D
, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -13A
V
GS
= -10V
1.4
I
D
= -7.0A
0.03
T
A
= 125
o
C
0.02
T
A
= 25
o
C
0.01
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
o
0
125
150
175
2
2.5
3
3.5
4
4.5
5
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
50
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5.0V
-I
D
, DRAIN CURRENT (A)
40
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
T
A
= 125
o
C
1
0.1
0.01
0.001
0.0001
25
o
C
-55
o
C
30
20
T
A
= -125
o
C
10
25
o
C
-55
o
C
0
1.5
2
2.5
3
3.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679 Rev C1 (W)
FDS6679
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -13A
8
V
DS
= -5V
-10V
6000
5000
CAPACITANCE (pF)
-15V
C
ISS
f = 1 MHz
V
GS
= 0 V
4000
3000
2000
1000
0
C
OSS
C
RSS
6
4
2
0
0
10
20
30
40
50
60
70
80
Q
g
, GATE CHARGE (nC)
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
100µs
1ms
10ms
100ms
1s
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
50
Figure 8. Capacitance Characteristics.
-I
D
, DRAIN CURRENT (A)
40
10
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
30
1
10s
DC
20
0.1
V
GS
= -10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25 C
o
10
0.01
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 C/W
o
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6679 Rev C1 (W)
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