FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
Electrical
Characteristics
T
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= –250
µA
Min Typ
–20
–13
Max
Units
V
mV/°C
Off Characteristics
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
=
±12
V,
V
GS
= 0 V
V
DS
= 0 V
–0.6
–1
±100
–0.8
3
36
58
47
–10
13
754
167
92
–1.5
µA
nA
V
mV/°C
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V,
I
D
= –4.6 A,
V
GS
= –2.5 V,
I
D
= –3.6A,
V
GS
= –4.5 V, I
D
= –4.6 A, T
J
=125°C
V
GS
= –4.5 V,
V
DS
= –5 V,
V
DS
= –5 V
I
D
= –4.6 A
46
72
65
mΩ
I
D(on)
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
Notes:
1.
A
S
pF
pF
pF
Ω
20
20
35
31
11
ns
ns
ns
ns
nC
nC
nC
–1.4
A
V
nS
nC
Dynamic Characteristics
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
DD
= –10 V,
V
GS
= –4.5 V,
V
GS
= 0 V,
f = 1.0 MHz
I
D
= –1 A,
R
GEN
= 6
Ω
6
11
10
22
17
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= –10V,
V
GS
= –4.5 V
I
D
= –4.6 A,
7.5
1.5
2.0
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –1.4 A
Voltage
Diode Reverse Recovery Time
I
F
= –4.6 A,
Diode Reverse Recovery Charge d
iF
/d
t
= 100 A/µs
(Note 2)
–0.7
17
5
–1.2
the circuit board side of the solder ball, R
θJB
, is defined for reference. For R
θJC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θJC
and R
θJB
are guaranteed by design while R
θJA
is determined by the user' board design.
s
a)
72°C/W when
2
mounted on a 1in pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
157°C/W when mounted
on a minimum pad of 2 oz
copper
R
θJA
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
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Microcontroller MCU
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