FJC2098 NPN Epitaxial Silicon Transistor
July 2005
FJC2098
NPN Epitaxial Silicon Transistor
Camera Strobe Flash Application
• Complement to FJC1386
• High Collector Current
• Low Collector-Emitter Saturation Voltage
Marking
2 0
P Y
1
9 8
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
T
C
= 25°C unless otherwise noted
Parameter
Value
50
20
6
5
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Power Dissipation(T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T =25°C unless otherwise noted
C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
OB
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Test Condition
I
C
= 50µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50µA, I
C
= 0
V
CE
= 40V, V
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
I
C
= 4A, I
B
= 0.1A
I
C
= 4A, I
B
= 0.1A
V
CB
= 20V, I
E
= 0, f = 1MHz
Min.
50
20
6
Typ.
Max.
Units
V
V
V
0.5
0.5
120
390
1.0
1.2
23
µA
µA
V
V
pF
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJC2098 Rev. B2
FJC2098 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
14
Figure 2. DC Current Gain
1000
I
B
=200mA
12
V
CE
=2V
I
C
[mA], COLLECTOR CURRENT
10
h
FE
, DC CURRENT GAIN
Ta=125 C
Ta=25 C
100
o
o
8
Ta=-40 C
o
6
4
I
B
=20mA
2
0
0
2
4
6
8
10
10
0.01
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
Figure 4. Base-Emitter Saturation Voltage
10
I
C
=40I
B
V
CE
(sat)[V], SATURATION VOLTAGE
1
0.1
Ta=125 C
Ta=25 C
o
o
V
BE
(sat)[V], SATURATION VOLTAGE
I
C
=40I
B
1
Ta=-40 C
Ta=25 C
Ta=125 C
o
o
o
0.01
Ta=-40 C
o
1E-3
0.01
0.1
1
10
0.1
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
1.8
1.6
Figure 6. Common-Base Open-Circuit Output
Capacitance
100
V
CE
=2V
I
E
=0,f=1MHZ
C
ob
[pF], OUTPUT CAPACITANCE
1.2
1.4
I
C
[A], COLLECTOR CURRENT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
80
Ta=125 C
o
25 C
o
-40 C
o
60
40
20
0.2
0.4
0.6
0.8
1.0
0
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
FJC2098 Rev. B2
3
www.fairchildsemi.com
FJC2098 NPN Epitaxial Silicon Transistor
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5
FJC2098 Rev. B2
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ADI Reference Circuit
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