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FJC2098_05

Description
NPN Epitaxial Silicon Transistor
File Size465KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FJC2098_05 Overview

NPN Epitaxial Silicon Transistor

FJC2098 NPN Epitaxial Silicon Transistor
July 2005
FJC2098
NPN Epitaxial Silicon Transistor
Camera Strobe Flash Application
• Complement to FJC1386
• High Collector Current
• Low Collector-Emitter Saturation Voltage
Marking
2 0
P Y
1
9 8
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
T
C
= 25°C unless otherwise noted
Parameter
Value
50
20
6
5
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Power Dissipation(T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T =25°C unless otherwise noted
C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
OB
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Test Condition
I
C
= 50µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50µA, I
C
= 0
V
CE
= 40V, V
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
I
C
= 4A, I
B
= 0.1A
I
C
= 4A, I
B
= 0.1A
V
CB
= 20V, I
E
= 0, f = 1MHz
Min.
50
20
6
Typ.
Max.
Units
V
V
V
0.5
0.5
120
390
1.0
1.2
23
µA
µA
V
V
pF
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJC2098 Rev. B2

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