DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3433
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3433 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3433
2SK3433-S
2SK3433-ZJ
2SK3433-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 26 mΩ MAX. (V
GS
= 10 V, I
D
= 20 A)
R
DS(on)2
= 41 mΩ MAX. (V
GS
= 4.0 V, I
D
= 20 A)
•
Low C
iss
: C
iss
= 1500 pF TYP.
•
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
60
±20
±40
±80
47
1.5
150
−55
to +150
21
44
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14602EJ4V0DS00 (4th edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1999, 2001
2SK3433
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS
= 10 V
I
D
= 40 A
I
F
= 40 A, V
GS
= 0 V
I
F
= 40 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.0 V, I
D
= 20 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V, I
D
= 20 A
V
GS
= 10 V
R
G
= 10
Ω
1.5
11
2.0
22
22
29
1500
250
120
35
320
89
120
30
5
8
1.0
44
60
26
41
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90%
90%
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10%
10%
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14602EJ4V0DS
2SK3433
TYPICAL CHARACTERISTICS (T
A
= 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
60
50
40
30
20
10
0
0
20
40
60
80
100
120 140
160
0
20
40
60
80
100
120 140 160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D
- Drain Current - A
100
I
D(pulse)
d
ite )
im10 V
)
L
I
D(DC)
on
=
S(
S
R
D
t V
G
Po
(a
w
10
PW
=1
10
DC
Lim er
Di
ite
d ssip
10
ati
ms
1m
0
µ
s
0
µ
s
s
on
1
T
C
= 25˚C
Single Pulse
1
10
100
0.1
0.1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
R
th(ch-C)
= 2.66˚C/W
1
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14602EJ4V0DS
3
2SK3433
FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
I
D
- Drain Current - A
I
D
- Drain Current - A
100
80
60
40
V
GS
=10 V
10
T
A
=
−40˚C
25˚C
75˚C
150˚C
V
DS
= 10 V
5
6
1
4.0 V
20
0.1
1
2
3
4
Pulsed
0
1.0
2.0
3.0
4.0
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
100 V
DS
= 10 V
Pulsed
10
30
I
D
= 20 A
20
1
T
A
= 150˚C
75˚C
25˚C
−40˚C
0.1
10
0.01
0.01
0.1
0
1
10
100
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
70
60
50
40
30
20
10
0
0.1
1
10
100
V
GS
= 4.0 V
10 V
Pulsed
3.0
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2.0
1.5
1.0
0.5
0
−50
V
DS
= 10 V
I
D
= 1 mA
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14602EJ4V0DS
2SK3433
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
40
V
GS
= 4.0 V
30
10 V
20
10
0
−50
0
50
I
D
= 20 A
100
150
Pulsed
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
V
GS
= 10 V
10
V
GS
= 0 V
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1000
t
r
t
f
100
t
d(on)
10
t
d(off)
V
GS
= 0 V
f = 1 MHz
C
iss
1000
C
oss
100
C
rss
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
V
DD
= 48 V
30 V
12 V
V
GS
6
20
V
DS
0
0
4
8
12
16
20
I
D
= 40 A
24
28 32
4
2
12
10
8
V
GS
- Gate to Source Voltage - V
100
40
10
1
0.1
1.0
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14602EJ4V0DS
5
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