2SK3433-ZJ datasheet, PDF - EEWORLD Datasheet

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2SK3433-ZJ: DescriptionPower Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size80KB，8 Pages; ManufacturerNEC Electronics

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2SK3433-ZJ Overview

Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN

2SK3433-ZJ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NEC Electronics
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	44 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.041 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3433

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3433 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

2SK3433

2SK3433-S

2SK3433-ZJ

2SK3433-Z

PACKAGE

TO-220AB

TO-262

TO-263

TO-220SMD

Note

FEATURES

•

Super low on-state resistance:

DS(on)1

= 26 mΩ MAX. (V

= 10 V, I

= 20 A)

DS(on)2

= 41 mΩ MAX. (V

= 4.0 V, I

= 20 A)

•

Low C

iss

: C

iss

= 1500 pF TYP.

•

Built-in gate protection diode

Note

TO-220SMD package is produced only

in Japan.

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC) (T

= 25°C)

Drain Current (pulse)

Note1

DSS

GSS

D(DC)

D(pulse)

stg

±20

±40

±80

1.5

150

−55

to +150

°C

(TO-262)

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Note2

Notes 1.

≤

s, Duty cycle

≤

Starting T

= 25°C, V

= 30 V, R

= 25

Ω,

= 20

→

0 V

(TO-263, TO-220SMD)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D14602EJ4V0DS00 (4th edition)

Date Published July 2002 NS CP(K)

Printed in Japan

The mark

shows major revised points.

1999, 2001

2SK3433-ZJ Related Products

	2SK3433-ZJ	2SK3433	2SK3433-S
Description	Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN	Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN	Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, MP-25 FIN CUT, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics
Parts packaging code	D2PAK	TO-220AB	TO-262AA
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	44 mJ	44 mJ	44 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (ID)	40 A	40 A	40 A
Maximum drain-source on-resistance	0.041 Ω	0.041 Ω	0.041 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-262AA
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSIP-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	80 A	80 A	80 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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