KSA3010 PNP Epitaxial Silicon Transistor
January 2007
KSA3010
PNP Epitaxial Silicon Transistor
•
•
•
•
•
Audio Power Amplifier
High Current Capability : I
C
= - 6A
High Power Dissipation
Wide S.O.A
Complement to KSC4010
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T =25°C unless otherwise noted
a
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-6
-12
60
150
- 50 ~ 150
Units
V
V
V
A
A
W
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
R
θJC
* Device mounted on the minimum pad size.
Parameter
Thermal Resistance, Junction to Case
Value
2.0
Units
°C/W
Electrical Characteristics*
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Conditions
I
C
= -5A, I
B
= 0
V
CB
= -120V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -5V, I
C
= -1A,
I
C
= -5A, I
B
= -0.5A
V
CE
= -5V, I
C
= -5A
V
CE
= -5V, I
C
= -1A
V
CB
=-10V, I
E
=0, f=1MHz
Min.
-120
-
-
55
-
-
-
-
Typ.
-
-
-
-
-
-
30
180
Max.
-
-10
-10
160
-2.5
-1.5
-
-
Units
V
µA
µA
V
V
MHz
pF
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
h
FE
Classification
Classification
h
FE
R
55 ~ 110
O
80 ~ 160
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSA3010 Rev. C
KSA3010 PNP Epitaxial Silicon Transistor
Typical Characteristics
10
9
A
00m
I
B
=-2
180mA
I
B
=-
-160mA
I
B
=
mA
I
B
=-140
I =-120mA
B
10
3
V
CE
=5V
I
C
(A), COLLECTOR CRRENT
8
7
6
I
B
=-100mA
h
FE
, DC CURRENT GAIN
I
B
=-80mA
I
B
=-60mA
5
I
B
=-40mA
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
I
B
=-20mA
T
C
=100
℃
T
C
=25
℃
10
2
10
1
0.1
1
10
V
CE
(V), COLLECTOR EMITTER VOLTAGE
I
C
(A), COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
I
C
=10I
B
V
CE
(sat), SATURATION VOLTAGE
9
I
C
(A), COLLECTOR CURRENT
V
CE
=-5V
8
7
6
5
T
C
=100
℃
4
3
2
1
T
C
=25
℃
1
0.1
T
C
=100
℃
T
C
=25
℃
0.01
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
C
(A), COLLECTOR CURRENT
V
BE
(V), BASE EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-100
100
90
I
C
[A], COLLECTOR CURRENT
P
C
(W), POWER DISSIPATION
I
C
MAX. (Pulse)
-10
10
0m
s
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
I
C
MAX. (DC)
-1
DC
ms
10
-0.1
*SINGLE NONREPETITIVE
PULSE T
C
=25[ C]
-0.01
0.1
1
10
100
o
V
CEO
MAX
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
(
℃
), CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
3
KSA3010 Rev. C
www.fairchildsemi.com
KSA3010 PNP Epitaxial Silicon Transistor
KSA3010 PNP Epitaxial Silicon Transistor
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CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
5
KSA3010 Rev. C
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