Excelics
DATA SHEET
0LQ
EFA025A-70
Low Distortion GaAs Power FET
'
6
*
•
•
•
•
•
•
•
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+20.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
6
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
P
1dB
Vds=6V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
G
1dB
Vds=6V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
PAE
Vds=6V, Ids=50% Idss
f=12GHz
Noise Figure Vds=3V,Ids=15mA
f=12GHz
NF
Associated Gain Vds=3V,Ids=15mA
f=12GHz
GA
Saturated Drain Current Vds=3V, Vgs=0V
Idss
Transconductance
Vds=3V, Vgs=0V
Gm
Pinch-off Voltage
Vds=3V, Ids=1.0 mA
Vp
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance
Rth
* Overall Rth depends on case mounting.
MIN
17
8.5
TYP
20
20
10
7
35
1.5
10
65
40
-2
-15
-14
370
*
MAX
UNIT
dBm
dB
%
dB
dB
mA
mS
V
V
V
o
C/W
35
30
-10
-6
All Dimensions In mils.
105
-3.5
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
10V
6V
Vds
Gate-Source Voltage
-6V
-4V
Vgs
Drain Current
Idss
52mA
Ids
Forward Gate Current
6mA
1mA
Igsf
Input Power
20dBm
@ 3dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
370mW
310mW
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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