LESHAN RADIO COMPANY, LTD.
Inverter
MC74VHC1G04
The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.
The MC74VHC1G04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G04 to be used to interface 5 V circuits to 3 V circuits.
•
High Speed: t
PD
= 3.5 ns (Typ) at V
CC
= 5 V
•
Low Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
•
Power Down Protection Provided on Inputs
•
Balanced Propagation Delays
•
Pin and Function Compatible with Other Standard Logic Families
•
Chip Complexity: FETs = 105; Equivalent Gates = 26
MARKING DIAGRAMS
5
4
1
2
3
V5
d
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
5
4
Figure 1. Pinout
(Top View)
1
2
3
V5
d
Figure 2. Logic Symbol
Pin 1
d = Date Code
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
FUNCTION TABLE
PIN ASSIGNMENT
1
2
3
4
5
NC
IN A
GND
OUT Y
V
CC
Inputs
A
L
H
Output
Y
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH4–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G04
MAXIMUM RATINGS
Value
Unit
DC Supply Voltage
– 0.5 to + 7.0
V
DC Input Voltage
– 0.5 to +7.0
V
DC Output Voltage
V
CC
=0
– 0.5 to +7.0
V
High or Low State
–0.5 to V
cc
+ 0.5
I
IK
Input Diode Current
–20
mA
I
OK
Output Diode Current
V
OUT
< GND; V
OUT
> V
CC
+20
mA
I
OUT
DC Output Current, per Pin
+ 25
mA
I
CC
DC Supply Current, V
CC
and GND
+50
mA
P
D
Power dissipation in still air
SC–88A, TSOP–5
200
mW
θ
JA
Thermal resistance
SC–88A, TSOP–5
333
°C/W
T
L
Lead Temperature, 1 mm from Case for 10 s
260
°C
T
J
Junction Temperature Under Bias
+ 150
°C
T
stg
Storage temperature
–65 to +150
°C
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
DC Supply Voltage
V
IN
V
OUT
T
A
t
r
,t
f
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
Symbol
V
CC
V
IN
V
OUT
Parameter
Min
2.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VH4–2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G04
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
Parameter
Minimum High–Level
Input Voltage
Test Conditions
V
CC
(V)
2.0
3.0
4.5
5.5
V
IL
Maximum Low–Level
Input Voltage
2.0
3.0
4.5
5.5
V
OH
Minimum High–Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= –4 mA
I
OH
= –8 mA
V
OL
Maximum Low–Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to5.5
5.5
0.36
0.36
±
0.1
T
A
= 25°C
T
A
<
85°C
–55°C<T
A
<125°C
Min Typ Max Min Max Min Max Unit
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
2.0
3.0
4.0
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±
1.0
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±
1.0
V
V
V
IN
= V
IH
or V
IL
I
OH
= – 50
µA
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
V
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
V
µA
µA
2.0
20
40
AC ELECTRICAL CHARACTERISTICS
C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
Symbol
t
PLH
,
t
PHL
Parameter
Maximum
Propagation Delay,
Input A or B to Y
V
CC
= 5.0
±
0.5 V C
L
= 15 pF
C
L
= 50 pF
C
IN
Maximum Input
Capacitance
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
8.0
pF
3.5
4.5
4
5.5
7.5
10
6.5
8.5
10
8.0
10.0
10
pF
Test Conditions
V
CC
= 3.3
±
0.3 V C
L
= 15 pF
C
L
= 50 pF
T
A
<
85°C
–55°C<T
A
<125°C
T
A
= 25°C
Min Typ
Max Min Max Min Max Unit
4.5
6.4
7.1
10.6
8.5
12.0
10.0
14.5
ns
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
•
V
CC
•
f
in
+ I
CC
.
C
PD
is used to determine the no–
load dynamic power consumption; P
D
= C
PD
•
V
CC 2
•
f
in
+ I
CC
•
V
CC
.
VH4–3/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G04
Figure 4. Switching Waveforms
*Includes all probe and jig capacitance
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Order Number
Temp
Circuit
Range Technology Device
Indicator
Function
Identifier
MC
MC
MC
MC
MC
74
74
74
74
74
VHC1G
VHC1G
VHC1G
VHC1G
VHC1G
04
04
04
04
04
Package
Suffix
DF
DF
DF
DT
DT
Tape &
Reel
Suffix
T1
T2
T4
T1
T3
Package Type
(Name/SOT#/
Common Name)
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SC–59
SOT–23/TSOPS/
SC–59
Tape and
Reel Size
MC74VHC1G04DFT1
MC74VHC1G04DFT2
MC74VHC1G04DFT4
MC74VHC1G04DTT1
MC74VHC1G04DTT3
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
VH4–4/4
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