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ZXM62P02E6_04

Description
2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size174KB,7 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZXM62P02E6_04 Overview

2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXM62P02E6_04 Parametric

Parameter NameAttribute value
Number of terminals6
Minimum breakdown voltage20 V
Processing package descriptionSOT-23, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeP-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current2.3 A
Maximum drain on-resistance0.2000 ohm
ZXM62P02E6
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.20
;
I
D
=-2.3A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM62P02E6TA
ZXM62P02E6TC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
Top View
3000 units
10000 units
DEVICE MARKING
2P02
ISSUE 1 - JUNE 2004
1

ZXM62P02E6_04 Related Products

ZXM62P02E6_04 ZXM62P02E6TC ZXM62P02E6TA
Description 2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 6 6 6
surface mount Yes YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? - conform to conform to
Maker - Zetex Semiconductors Zetex Semiconductors
package instruction - SMALL OUTLINE, R-PDSO-G6 SOT-23, 6 PIN
Reach Compliance Code - unknown unknow
ECCN code - EAR99 EAR99
Other features - LOW THRESHOLD LOW THRESHOLD
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 20 V 20 V
Maximum drain current (Abs) (ID) - 2.3 A 2.3 A
Maximum drain current (ID) - 2.3 A 2.3 A
Maximum drain-source on-resistance - 0.2 Ω 0.2 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PDSO-G6 R-PDSO-G6
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) - 1.7 W 1.7 W
Certification status - Not Qualified Not Qualified
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature - 30 40
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